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2SK879-O(TE85R,F)

Description
Small Signal Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size292KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SK879-O(TE85R,F) Overview

Small Signal Field-Effect Transistor

2SK879-O(TE85R,F) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
2SK879
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK879
General Purpose and Impedance Converter and
Condenser Microphone Applications
High breakdown voltage: V
GDS
=
−50
V
High input impedance: I
GSS
=
−1.0
nA (max) (V
GS
=
−30
V)
Low noise: NF = 0.5dB (typ.) (R
G
= 100 kΩ, f = 120 Hz)
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
−50
10
100
125
−55
to 125
Unit
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
SC-70
2-2E1B
Weight: 0.006 g (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Symbol
I
GSS
V
(BR) GDS
Test Condition
V
GS
= −30
V, V
DS
=
0
V
DS
=
0, I
G
= −100 μA
Min
−50
0.3
−0.4
1.2
Typ.
8.2
2.6
0.5
Max
−1.0
6.5
−5.0
Unit
nA
V
mA
V
mS
pF
pF
dB
I
DSS
V
DS
=
10 V, V
GS
=
0
(Note)
V
GS (OFF)
⎪Y
fs
C
iss
C
rss
NF
V
DS
=
10 V, I
D
=
0.1
μA
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
GD
= −10
V, I
D
=
0, f
=
1 MHz
V
DS
=
15 V, V
GS
=
0
R
G
=
100 kΩ, f
=
120 Hz
Note: I
DSS
classification R: 0.30 to 0.75 mA, O: 0.60 to 1.40 mA, Y: 1.2 to 3.0 mA, GR: 2.6 to 6.5 mA
Marking
Start of commercial production
1987-05
1
2014-03-01

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Description Small Signal Field-Effect Transistor Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET Small Signal Field-Effect Transistor JFET N-CH 0.1W USM JFET N-CH 0.1W USM
Reach Compliance Code unknown unknow unknown unknown unknown
Base Number Matches 1 1 1 1 1
Maker Toshiba Semiconductor - Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
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