Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
2N3416
•
Features
This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 300mA
NPN General
Purpose Amplifier
TO-92
A
E
Pin Configuration
Bottom View
B
C
E
Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
Symbol
P
D
R
J C
R
JA
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
Rating
Total Device Dissipation
Derate above 25
O
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Rating
50
50
5.0
500
-55 to +150
-55 to +150
Max
625
5.0
83.3
200
Unit
V
V
V
mA
O
C
O
C
Unit
mW
mW/
O
C
O
C/W
O
C/W
B
Thermal Characteristics
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
D
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
(I
C
=10mAdc, I
B
=0)
50
---
Vdc
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=10ìAdc, I
E
=0)
50
---
Vdc
V
(BR)EBO
Emitter-Base Breakdown Voltage
(I
E
=10ìAdc, I
C
=0)
5.0
---
Vdc
I
CBO
Collector Cutoff Current
(V
CB
=25Vdc, I
E
=0.4Vdc)
---
100
nAdc
O
(V
CB
=18Vdc, I
E
=0, T
A
=100 C)
---
15
uAdc
I
EBO
Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
---
100
nAdc
* These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
Notes: 1. These ratings are based on a maximum junction temperature of 150
degrees C.
2. These are steady state limits. The factory should be consulted on
applications involving pulsed or low duty cycle operations.
V
(BR)CEO
G
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.010
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
DIM
A
B
C
D
E
G
MAX
.190
.190
.590
.020
.160
.104
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
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2N3416
Symbol
Parameter
DC Current Gain
(V
CE
=4.5Vdc, I
C
=2.0mAdc)
Collector-Emitter Saturation Voltage
(I
C
=50mAdc, I
B
=3.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
Min
Max
Units
ON CHARACTERISTICS*
h
FE
V
CE(sat)
V
BE(sat)
75
---
0.6
225
0.3
1.3
---
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
h
fe
Small-Signal Current Gain
(I
C
=2.0mAdc, V
CE
=4.5Vdc, f=1.0KHz)
* Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
75
---
---
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