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2SJ355

Description
Power Field-Effect Transistor, 2A I(D), 30V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size3MB,399 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SJ355 Overview

Power Field-Effect Transistor, 2A I(D), 30V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2SJ355 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)2 A
Maximum drain-source on-resistance0.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)4 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
SEMICONDUCTORS
SELECTION
GUIDE
Microcomputer 1
IC Memory 2
Semi-Custom IC 3
Particular Purpose 4
General Purpose Linear IC 5
Transistor/Diode/Thyristor 6
RF and Microwave Devices 7
Optical Device 8
Index 9
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