DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1824
N-CHANNEL MOS FET
FOR SWITCHING
The 2SK1824 is a N-channel vertical type MOS FET that is
driven at 2.5 V.
Because this MOS FET can be driven on a low voltage and
because it is not necessary to consider the drive current, the
2SK1824 is ideal for driving the actuator of power-saving systems,
1.6 ± 0.1
PACKAGE DIMENSIONS (in mm)
0.3 ± 0.05
0.1
+0.1
–0.05
such as VCR cameras and headphone stereo systems.
Moreover, the 2SK1824 is housed in a super small mini-mold
package so that it can help increase the mounting density on the
printed circuit board and lower the mounting cost, contributing to
miniaturization of the application systems.
0.8 ± 0.1
D
0 to 0.1
G
0.2
+0.1
–0
0.5
0.5
0.6
0.75 ± 0.05
S
FEATURES
• Small mounting area: about 60 % of the conventional mini-mold
package (SC-70)
• Can be automatically mounted
• Can be directly driven by 3-V IC
1.0
1.6 ± 0.1
EQUIVALENT CIRCUIT
Drain (D)
The internal diode in the right figure is a parasitic diode.
The protection diode is to protect the product from damage
due to static electricity. If there is a danger that an extremely
high voltage will be applied across the gate and source in the
actual circuit, a gate protection circuit such as an external
constant-voltage diode is necessary.
Gate (G)
Gate
protection
diode
Source (S)
Internal
diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: B1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
≤
10 ms
Duty cycle
≤
50 %
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
P
T
T
ch
T
opt
T
stg
3.0 cm
2
×
0.64 mm, ceramic substrate used
200
150
–55 to +80
–55 to +150
mW
˚C
˚C
˚C
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
30
±7
±100
±200
UNIT
V
V
mA
mA
Document No. D11220EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
2SK1824
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
PARAMETER
Drain Cut-Off Current
Gate Leakage Current
Gate Cut-Off Voltage
Forward Transfer Admittance
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)1
R
DS(on)2
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 5V, I
D
= 10 mA
V
GS(on)
= 5 V, R
G
= 10
Ω
R
L
= 500
Ω
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0
V
GS
=
±5
V, V
DS
= 0
V
DS
= 3 V, I
D
= 10
µ
A
V
DS
= 3 V, I
D
= 10 mA
V
GS
= 2.5 V, I
D
= 1 mA
V
GS
= 4.0 V, I
D
= 10 mA
V
DS
= 5.0 V, V
GS
= 0, f = 1 MHz
0.8
20
±0.1
1.0
50
7
5
16
14
2
15
20
100
100
13
8
MIN.
TYP.
MAX.
1.0
±3
1.5
UNIT
µ
A
µ
A
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (Resistive Load)
R
L
DUT
V
DD
R
G
PG.
Gate
Voltage
Waveform
V
GS
0
10 %
V
GS(on)
90 %
I
D
Drain
Current
Waveform
10 %
90 %
90 %
I
D
10 %
0
V
in
0
τ
τ
= 1
µ
s
Duty cycle
≤
1 %
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
2
2SK1824
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
240
100
80
60
40
20
200
160
120
80
40
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3.0 cm
2
×
0.64 mm
Using ceramic substrate
P
T
- Power Dissipation - mW
dT - Derating Factor - %
0
20
40
60
80
100
120
140 160
0
30
60
90
120
150
180
T
C
- Case Temperature - ˚C
TRANSFER CHARACTERISTICS
|y
fs
| - Forward Transfer Admittance - mS
300
100
I
D
- Drain Current - mA
V
DS
= 3 V
Pulsed
600
T
A
- Ambient Temperature - ˚C
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
V
DS
= 3 V
Pulsed
T
A
= 25 ˚C
–25 ˚C
200
100
50
20
10
5
2
0.5
10
150 ˚C
T
A
= –25 ˚C
1.0
75 ˚C
150 ˚C
2.5 ˚C
0.1
7.5 ˚C
0.01
0.001
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.0
3.0
10
30
100
200
V
GS
- Drain to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-State Resistance -
Ω
R
DS(on)
- Drain to Source On-State Resistance -
Ω
13
Pulsed
11
24
20
16
12
8
4
0
0.5
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
V
GS
= 2.5 V
Pulsed
9
I
D
= 0.1 A
7
T
A
= 150 ˚C
75 ˚C
25 ˚C
5
–25 ˚C
I
D
= 10 mA
3
0
1
2
3
4
5
6
7
8
1
3
10
30
60
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - mA
3
2SK1824
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-State Resistance -
Ω
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
50
f = 1 MHz
V
DS
= 5 V
30
V
GS
= 4 V
Pulsed
C
iss
, C
oss
, C
rss
- Capacitance - pF
30
C
iss
10
C
oss
20
3
C
rss
1
0.5
10
T
A
= 150 ˚C
75 ˚C
25 ˚C
–25 ˚C
0
0.5
1
3
10
30
100 200
0.5
1
3
10
30
I
D
- Drain Current - mA
V
DS
- Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
200 V
GS
= 0
100 Pulsed
SWITCHING CHARACTERISTICS
300
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ms
t
d(off)
100
t
f
V
DD
= 5 V
V
GS
= 5 V
R
in
= 10
Ω
I
SD
- Diode Forward Current
30
10
t
r
30
t
d(on)
10
0
10
30
100
300
3
1
0.3
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
1.1
I
D
- Drain Current - mA
V
SD
- Source to Drain Voltage - V
4
2SK1824
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
Document No.
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
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