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2SK680A-AZ

Description
Small Signal Field-Effect Transistor, 1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINIMOLD, SC-62, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size318KB,6 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric Compare View All

2SK680A-AZ Overview

Small Signal Field-Effect Transistor, 1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINIMOLD, SC-62, 3 PIN

2SK680A-AZ Parametric

Parameter NameAttribute value
MakerNEC Electronics
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)1 A
Maximum drain-source on-resistance1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-F3
JESD-609 codee6
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2SK680A-AZ Related Products

2SK680A-AZ 2SK680A-T1
Description Small Signal Field-Effect Transistor, 1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINIMOLD, SC-62, 3 PIN Small Signal Field-Effect Transistor, 1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, MINIMOLD, SC-62, 3 PIN
Maker NEC Electronics NEC Electronics
Parts packaging code SC-62 SC-62
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 1 A 1 A
Maximum drain-source on-resistance 1 Ω 1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-F3 R-PSSO-F3
JESD-609 code e6 e0
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface TIN BISMUTH TIN LEAD
Terminal form FLAT FLAT
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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