DATA SHEET
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation
and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
FEATURES
• Large current capacity:
I
C(DC)
:
−10
A, I
C(pulse)
:
−15
A
• High h
FE
and low collector saturation voltage:
h
FE
= 200 MIN. (@V
CE
=
−2.0
V, I
C
=
−0.5
A)
V
CE(sat)
≤ −0.25
V (@I
C
=
−4.0
A, I
B
=
−0.05
A)
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(T
a
= 25°C)**
P
T
(T
c
= 25°C)
T
j
T
stg
Ratings
−30
−20
−10
−10
−15
−0.5
1.0
15
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
* PW
≤
10 ms, duty cycle
≤
50%
** Printing board mounted
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16119EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1615, 1615-Z
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacity
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE1
*
h
FE2
*
V
CE(sat)
*
V
BE(sat)
*
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
=
−20
V, I
E
= 0
V
EB
=
−8.0
V, I
C
= 0
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−4.0
A
I
C
=
−4.0
A, I
B
=
−0.05
A
I
C
=
−4.0
A, I
B
=
−0.05
A
V
CE
=
−5.0
V, I
E
= 1.5 A
V
CB
=
−10
V, I
E
= 0, f = 1.0 MHz
I
C
=
−5.0
A, I
B1
=
−I
B2
= 0.125 A,
R
L
= 2.0
Ω,
V
CC
≅ −10
V
200
160
−0.2
−0.9
180
220
80
300
60
−0.25
−1.2
V
V
MHz
pF
ns
ns
ns
MIN.
TYP.
MAX.
−1.0
−1.0
600
Unit
µ
A
µ
A
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
h
FE2
L
200 to 400
K
300 to 600
PACKAGE DRAWING (UNIT: mm)
2SA1615
2SA1615-Z
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Collector (fin)
2
Data Sheet D16119EJ1V0DS
2SA1615, 1615-Z
TYPICAL CHARACTERISTICS (Ta = 25
°
C)
Total Power Dissipation P
T
(W)
I
C
Derating dT (%)
Case Temperature T
C
(°C)
Case Temperature T
C
(°C)
Collector Current I
C
(A)
Single pulse
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
–15
Collector Current I
C
(A)
–10
–5
Base to Emitter Voltage V
BE
(V)
DC Current Gain h
FE
Collector Current I
C
(A)
Data Sheet D16119EJ1V0DS
3
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