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2SK1285-AZ

Description
Power Field-Effect Transistor, 3A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size377KB,8 Pages
ManufacturerNEC Electronics
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2SK1285-AZ Overview

Power Field-Effect Transistor, 3A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

2SK1285-AZ Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance0.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)12 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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