JANTXV2N2907AUB
A Microsemi Company
580 Pleasant St.
Watertown, MA 02172
Phone: 617-924-9280
Fax: 617-924-1235
HSOT PRODUCT SPECIFICATION
SWITCHING TRANSISTOR
PNP SILICON
FEATURES:
n
I.A.W. MIL-PRF-19500/291
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SMALL OUTLINE SURFACE MOUNT PACKAGE
n
GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS
n
LOW VCE(sat): .4V @ IC = 150 mAdc
PHYSICAL DIMENSIONS
Absolute Maximum Ratings:
Symbol
Vceo
Vcbo
Vebo
Ic
Pd
Pd
Tj, Tstg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current- Continuous
Total Device Dissipation @Ta=25 °C
Derate above 25 °C
Total Device Dissipation @Tc=25 °C
Derate above 25 °C
Operating Junction & Storage
Temperature Range
Limit
60
60
5.0
600
0.4
2.28
1.16
6.6
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
mW/°C
W
mW/°C
°C
Thermal Characteristics:
Symbol
ROJA
ROJC
Parameter
Thermal Resistance, Juction to Ambient
Thermal Resistance, Junction to Case
Limit
350
72
Unit
°C/W
°C/W
Also available as JANTX2N2907AUB and in an industrial version as HS2907A, contact factory for details.
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HSOT: Hermetic Small Outline Transistor. The three pin leadless chip carrier design matches the footprint of a plastic SOT23
package.
DATASHEET# MSC0327A.PDF
Electrical Characteristics @ Tj = 25
°
C
Symbol
Parameter
Conditions
Min Max Unit
OFF CHARACTERISTICS
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICES
ICBO1
IEBO
Breakdown Voltage, Collector to Base
Breakdown Voltage, Emitter to Base
Breakdown Voltage, Collector to Emitter
Collector to Emitter Cutoff Current
Collector to Base Cutoff Current
Emitter to Base Cutoff Current
Bias Cond. D, IC=10uAdc
Bias Cond. D, IE=10uAdc
Bias Cond. D, IC= 10mAdc, pulsed
Bias Cond. D, VCE=50Vdc
Bias Cond. D, VCB=50Vdc
Bias Cond. D, VEB= 4Vdc
60
5
60
Vdc
Vdc
Vdc
50 nAdc
10 nAdc
50 nAdc
ON CHARACTERISTICS
hFE1
hFE2
hFE3
hFE4
hFE5
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Forward-Current Transfer Ratio
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
VCE=10Vdc, IC=0.1mAdc
VCE=10Vdc, IC=1.0mAdc
VCE=10Vdc, IC=10mAdc
VCE=10Vdc, IC=150mAdc, pulsed
VCE=10Vdc, IC=500mAdc, pulsed
IC=150mAdc, IB=15mAdc, pulsed
IC=500mAdc, IB=50mAdc, pulsed
IC=150mAdc, IB=15mAdc, pulsed
IC=500mAdc, IB=50mAdc, pulsed
75
100
100
100
50
450
300
0.4
1.6
1.3
2.6
Vdc
Vdc
Vdc
Vdc
0.6
SMALL SIGNAL CHARACTERISTICS
hfe
/hfe/
Cobo
Cibo
Short Circuit Forward Current Xfer Ratio
Magnitude of Short Circuit Forward
Current Transfer Ratio
Output Capacitance
Input Capacitance
VCE= 10Vdc,IC =1mAdc, f= 1kHz
VCE= 20Vdc,IC =20mAdc, f=100MHz
VCB= 10Vdc, IE =0, 100kHz< f <1MHz
VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz
100
2
8 pF
30 pF
SWITCHING CHARACTERISTICS
ton
toff
Saturated Turn-on Time
Saturated Turn-off Time
As defined in 19500/291 Figure 6
As defined in 19500/291 Figure 7
45 nS
300 nS
Sertech reservers the right to make changes to any product design, specification or other information at any time without prior
notice.
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