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2SK823

Description
Power Field-Effect Transistor, 25A I(D), 250V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size148KB,4 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SK823 Overview

Power Field-Effect Transistor, 25A I(D), 250V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

2SK823 Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage250 V
Maximum drain current (ID)25 A
Maximum drain-source on-resistance0.15 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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