2SJ44
IFN5114, IFN5115
IFN5116
VCR3P
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
r
ds(on)
g
fs
C
iss
C
iss
e
N
¯
t
d(on)
t
r
t
d(off)
t
f
75
15
18
4.5
8
5
10
6
5
Ω
mS
pF
pF
ns
ns
ns
ns
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
–5
1
Min
30
Typ
40
0.5
1
– 60
8
Max
Unit
V
nA
mA
V
PJ99 Process
Test Conditions
I
G
= 1 µA, V
DS
= ØV
V
GS
= 20V, V
DS
= ØV
V
DS
= – 15V, V
GS
= ØV
V
DS
= – 15V, I
D
= 1 nA
I
D
= 1 mA, V
GS
= ØV
V
DS
= – 15V, V
GS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= ØV, V
GS
= 10V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
nV/√HZ V
DS
= – 10V, V
GS
= ØV
V
DD
= – 10V, I
D(ON)
= – 15 mA
R
L
= 580
Ω,
V
GS(ON)
= ØV
V
GS(OFF)
= 12V
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.co
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of V
GS(OFF)
Drain Source (on) Resistance in
Ω
Drain Saturation Current in mA
– 80
125
I
DSS
as a Function of R
DS
– 60
100
– 40
75
– 20
50
25
0
– 20
– 40
– 60
– 80
Drain Saturation Current in mA
0
2
4
6
8
10
Gate Source Cutoff Voltage in Volts
Input Capacitance as a Function of V
GS
24
Feedback Capacitance in pF
V
DS
= Ø V
Input Capacitance in pF
12
Feedback Capacitance as a Function of V
G
V
DS
= Ø V
8
16
V
DS
= – 10 V
8
4
V
DS
= – 10 V
0.1
1
Gate Source Voltage in Volts
10
20
0.1
1
Gate Source Voltage in Volts
10
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