Sirenza Microdevices’ SUF-2000 is a monolithically matched broadband
high IP3 gain block covering 0.05-10 GHz. This pHEMT FET-based
amplifier uses a patented self-bias Darlington topology featuring a gain
and temperature compensating active bias network that operates from
a single 5V supply. It offers efficient, cascadable performance in a
compact 0.88 x 0.86 mm
2
die. It is well-suited for RF, LO, and IF driver
applications.
Gain & Return Loss vs. Frequency
(GSG Probe Data)
20
18
16
14
G ain (dB)
12
10
8
6
4
2
0
0
4
8
12
16
20
Fre que ncy (Ghz)
-30
IRL
GAIN
\
ORL
-12
-18
-24
-6
Return Loss (dB)
0
0.2-10 GHz, Cascadable pHEMT
MMIC Amplifier
Product Features
•
•
•
•
•
•
•
•
Broadband Performance
High Gain = 12.0 dB @ 6 GHz
P1dB = 16 dBm @ 6 GHz
Low-noise, Efficient Gain Block
3.3V Operation, No Dropping Resistor
Low Gain Variation vs. Temperature
Patented Thermal Design
Patented Self-Bias Darlington Circuit
Applications
•
•
•
•
•
Broadband Communications
Test Instrumentation
Military & Space
LO and IF Mixer Applications
High IP3 RF Driver Applications
Frequency
Min.
Typ.
Max.
Symbol
Parameters
Units
G
p
Small Signal Power Gain
dB
P1dB
Output Power at 1dB Compression
dBm
OIP3
Output Third Order Intercept Point
dBm
NF
Noise Figure
dB
IRL
Input Return Loss
dB
ORL
Output Return Loss
dB
Isol
V
D
I
D
ΔG/ΔT
Rth, j-l
Reverse Isolation
dB
Test Conditions:
Test Conditions:
Device Operating Voltage
V
Device Operating Current
mA
Device Gain Temperature Coefficient
dB/°C
Thermal Resistance (junction-to-backside)
mA Typ.
°C/W
V =5V
I = 80
S
D
V
S
= 3.3V, I
D
= 71mA OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm
T
L
= 25ºC
Z
S
= Z
L
= 50 Ohms
Measured with Bias Tees
Z
S
= Z
L
= 50 Ohms. GSG Probe Data With Bias Tees
-18.0
-17.0
-16.0
3.3
71
-0.01
256
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
2 GHz
6 GHz
10 GHz
2 GHz
6 GHz
10 GHz
2 GHz
6 GHz
10 GHz
2 GHz
6 GHz
10 GHz
2 GHz
6 GHz
10 GHz
2 GHz
6 GHz
10 GHz
2 GHz
6 GHz
10 GHz
12.0
11.5
11.0
16.0
16.0
15.5
33.0
30.0
27.0
3.6
3.6
4.6
-16.0
-24.0
-22.0
-10.0
-11.0
-15.0
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-105416 Rev A
Preliminary
SUF-2000 0.2-10 GHz Cascadable MMIC Amplifier
Typical Performance (GSG Probe Data)
S21 vs. Frequency
14
12
10
P1dB vs. Frequency
20
19
18
17
16
dBm
15
14
13
12
11
10
25C
0C
85C
8
dB
6
4
2
0
0
4
8
12
16
20
Fre que ncy (GHz)
0C
25C
85C
0
2
4
6
8
10
12
14
16
18
Fre que ncy (GHz)
S11 vs. Frequency
0
-5
-10
dB
-15
-20
-25
-30
0
4
8
12
16
20
Fre que ncy (GHz)
0C
25C
85C
S22 vs. Frequency
0
-5
-10
dB
-15
-20
-25
-30
0
4
8
12
16
20
Fre que ncy (GHz)
0C
25C
85C
OIP3 vs . Fre que ncy
40
38
36
34
32
dBm
30
28
26
24
22
20
0
2
4
6
8
10
12
14
16
18
Fre que ncy (GHz)
1
0
0
2
4
dB
7
Noise Figure vs. Frequency
25C
0C
85C
6
5
4
3
2
25C
-20C
85C
6
8
10
12
14
16
18
Fre que ncy (GHz)
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-105416 Rev A
Preliminary
SUF-2000 0.2-10 GHz Cascadable MMIC Amplifier
Typical Performance (GSG Probe Data)
Freq
(GHz)
0.2
0.5
0.85
2
4
6
10
16
Test Conditions:
Test Conditions:
V
D
(V)
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
Current
(mA)
71
71
71
71
71
71
71
71
Gain
(dB)
12.5
12.5
12.5
12.0
12.0
11.5
11.0
8.0
P1dB
(dBm)
OIP3
(dBm)
S11
(dB)
-14.0
-14.0
-15.0
-16.0
-18.0
-24.0
-22.0
-16.0
S22
(dB)
-10.0
-10.0
-10.0
-10.0
-10.5
-11.0
-15.0
-17.0
NF
(dB)
16.5
16.0
16.5
16.0
15.5
13.0
31.0
33.0
32.0
30.0
27.0
25.0
3.7
3.6
3.8
3.6
4.6
5.4
GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25°C
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
D
)
Max RF Input Power
Absolute Limit
80mA
3.6V
10dBm
Max Dissipated Power
Max Junction Temperature (T
J
)
Operating Temperature Range (T
L
)
Max Storage Temp.
288mW
150C
-40 to +85C
-65 to 150C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
T
L
=Backside of die
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
Current Variation vs. Temperature
Current vs. Voltage
85
80
75
mA
70
65
60
55
3.1
3.15
3.2
3.25
3.3
V
D
3.35
3.4
3.45
3.5
0C
25C
85C
ELECTROSTATIC SENSITIVE DEVICE
Appropriate precautions in handling, packaging
and testing devices must be observed.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-105416 Rev A
Preliminary
SUF-2000 0.2-10 GHz Cascadable MMIC Amplifier
Pad Description
1
2
Pad #
Function
Description
1
2
Die
Bottom
This pad is DC coupled and matched to 50 Ohms.
An external DC block is required.
This pad is DC coupled and matched to 50 Ohms.
RF
OUT
/ Bias
Bias is applied through this pad.
RF
IN
GND
Die bottom must be connected to RF/DC ground
using silver-filled conductive epoxy.
Notes:
1. All Dimensions in Inches [Millimeters].
2. No connection required for unlabeled bond pads.
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