in low-cost surface-mountable plastic package. These HBT
MMICs are fabricated using molecular beam epitaxial growth
technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 1800-2500 MHz
cellular, ISM, WLL and Wideband CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
Typical IP3, P1dB, Gain
45
40
35
30
25
20
15
10
5
0
1960 MHz
2140 MHz
IP3
P1dB
Gain
SXT-289
1800-2500 MHz Medium Power
GaAs HBT Amplifier
Product Features
•
Patented High Reliability GaAs HBT Technology
•
High Output 3rd Order Intercept : +42 dBm typ.
•
at 2450 MHz
Surface-Mountable Power Plastic Package
Applications
•
Balanced Amplifier Configuration App. Note
(AN-011)
2450 MHz
•
PCS Systems
•
WLL, Wideband CDMA Systems
•
ISM Systems
Symbol
Parameters: Test Conditions:
Z
0
= 50 Ohms, Ta = 25°C
Output Power at 1dB Compression
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
V
S
= 8V
R
BIAS
= 27 Ohms
V
D
= 5 V typ.
Units
dB m
dB m
dB m
dB
dB
dB
-
dB m
dB m
dB m
dB
dB
dB
mA
° C/W
Min.
Typ.
23.5
23.5
23.0
15.0
15.0
13.8
1.4:1
1.6:1
1.6:1
Max.
P
1dB
22.5
S
21
Small signal gain
13.5
16.6
S
11
Input VSWR
IP
3
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
37.5
41.0
40.0
42.0
4.4
4.5
5.4
NF
Noise Figure
I
D
R
th
, j-l
Device Current
Thermal Resistance (junction - lead)
85
105
108
120
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101157 Rev G
1
SXT-289 1800-2500 MHz Power Amplifier
Note: Tuned for Output IP3
1960 MHz Application Circuit Data, V
S
=8V, I
D
=105mA, R
BIAS
=27 Ohms
P1dB vs Frequency
26
25
25C
-40C
85C
dB
Gain vs. Frequency
20
18
16
14
12
10
1930
25C
-40C
85C
dBm
24
23
22
21
1930
1940
1950
1960
MHz
1970
1980
1990
1940
1950
1960
MHz
1970
1980
1990
Input/Output Return Loss,
Isolation vs Frequency
0
-5
-10
-15
-20
-25
-30
-35
-40
1930
T=25
o
C
S11
dBm
42
41
40
39
38
37
1930
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
dB
S22
S12
25C
-40C
85C
1940
1950
1960
MHz
1970
1980
1990
1940
1950
1960
MHz
1970
1980
1990
Third Order Intercept vs Tone Power
Device Current vs. Source Voltage
180
160
140
120
100
80
60
40
20
0
0
2
25C
-40C
85C
42
Device Current (mA)
41
dBm
40
39
38
37
0
2
4
6
8
10
12
14
16
P
OUT
per tone (dBm)
25C
-40C
85C
4
V
S
(V)
6
8
10
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101157 Rev G
2
SXT-289 1800-2500 MHz Power Amplifier
Note: Tuned for Output IP3
2140 MHz Application Circuit Data, V
S
=8V, I
D
=105mA, R
BIAS
=27 Ohms
P1dB vs Frequency
Gain vs. Frequency
26
25
dBm
20
25C
-40C
85C
dB
18
16
14
12
10
2110
25C
-40C
85C
24
23
22
21
2110
2120
2130
2140
MHz
2150
2160
2170
2120
2130
2140
MHz
2150
2160
2170
Input/Output Return Loss,
Isolation vs Frequency
5
0
-5
-10
-15
-20
-25
-30
-35
2110
T=25
o
C
45
43
dBm
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
dB
S11
S22
S12
41
39
37
35
2110
25C
-40C
85C
2120
2130
2140
MHz
2150
2160
2170
2120
2130
2140
MHz
2150
2160
2170
Third Order Intercept vs Tone Power
Device Current vs. Source Voltage
45
Device Current (mA)
43
dBm
41
39
37
35
0
2
4
6
8
10
12
14
16
P
OUT
per tone (dBm)
25C
-40C
85C
180
160
140
120
100
80
60
40
20
0
0
2
25C
-40C
85C
4
V
S
(V)
6
8
10
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101157 Rev G
3
SXT-289 1800-2500 MHz Power Amplifier
Note: Tuned for Output IP3
2450 MHz Application Circuit Data, V
S
=8V, I
D
=105mA, R
BIAS
=27 Ohms
P1dB vs Frequency
Gain vs. Frequency
25C
-40C
85C
dB
26
25
24
dBm
20
18
16
14
12
10
2400
25C
-40C
85C
23
22
21
20
2400
2420
2440
MHz
2460
2480
2500
2420
2440
2460
MHz
2480
2500
Input/Output Return Loss,
Isolation vs Frequency
5
0
-5
-10
-15
-20
-25
S12
-30
-35
2400
2420
dB
T=25
o
C
S22
dBm
46
44
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
S11
42
40
38
36
2400
25C
-40C
85C
2440
MHz
2460
2480
2500
2420
2440
2460
MHz
2480
2500
Third Order Intercept vs Tone Power
Device Current vs. Source Voltage
46
Device Current (mA)
44
dBm
42
40
38
36
0
2
25C
-40C
85C
180
160
140
120
100
80
60
40
20
0
0
2
25C
-40C
85C
4
6
8
10
12
14
16
4
V
S
(V)
6
8
10
P
OUT
per tone (dBm)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-101157 Rev G
4
SXT-289 1800-2500 MHz Power Amplifier
1960 MHz Application Circuit Data, V
S
=8V, I
D
=105mA, R
BIAS
=27 Ohms
IS-95, 9 Channels Forward
1960 MHz Adjacent Channel Power vs. Channel Output Power
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