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2SK3467

Description
Power Field-Effect Transistor, 80A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size70KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric View All

2SK3467 Overview

Power Field-Effect Transistor, 80A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN

2SK3467 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)80 A
Maximum drain-source on-resistance0.0095 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)320 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3467
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3467 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER
2SK3467
2SK3467-ZK
PACKAGE
TO-220AB
TO-263(MP-25ZK)
FEATURES
4.5 V drive available
Low on-state resistance
R
DS(on)1
= 6.0 mΩ MAX. (V
GS
= 10 V, I
D
= 40 A)
Low gate charge
Q
G
= 55 nC TYP. (I
D
= 80 A, V
DD
= 16 V, V
GS
= 10 V)
Built-in gate protection diode
Surface mount device available
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (Pulse)
Note
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
20
±20
±80
±320
1.5
76
150
−55
to +150
V
V
A
A
W
W
°C
°C
(TO-263)
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Note
PW
10
µ
s, Duty Cycle
1%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14991EJ1V0DS00 (1st edition)
Date Published March 2001 NS CP(K)
Printed in Japan
©
2001
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