DSEC 30-03A
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
I
FAV
= 2x15 A
V
RRM
= 300 V
t
rr
= 30 ns
A
V
RSM
V
300
V
RRM
V
300
Type
A
C
TO-247 AD
DSEC 30-03A
A
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
D4
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Conditions
T
C
= 140°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 2.5 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
50
15
110
0.8
A
A
A
Features
•
•
•
•
•
•
•
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
de
0.3
-55...+175
175
-55...+150
95
w
T
C
= 25°C
mounting torque
typical
ne
r
fo
0.25
30
0.8...1.2
6
Symbol
I
R
①
Conditions
t
Characteristic Values
typ.
max.
100
0.5
1.20
1.67
1.6
µA
mA
V
V
K/W
K/W
ns
2.7
A
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 150°C V
R
= V
RRM
I
F
= 15 A;
T
VJ
= 150°C
T
VJ
= 25°C
No
V
F
②
R
thJC
R
thCH
t
rr
I
RM
I
F
= 1 A; -di/dt = 100 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
Pulse test:
①
Pulse Width = 5 ms, Duty Cycle < 2.0 %
②
Pulse Width = 300
µs,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
si
mJ
A
°C
°C
°C
W
Nm
g
Recommended replacement:
DPG 30C300HB
20070605a
© 2007 IXYS All rights reserved
gn
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
1
-
2
DSEC 30-03A
40
A
I
F
30
T
VJ
=150°C
T
VJ
=100°C
20
T
VJ
= 25°C
Q
r
500
T
VJ
= 100°C
nC
400
I
RM
300
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
200
V
R
= 150V
20
T
VJ
= 100°C
A
15
V
R
= 150V
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
10
10
100
5
0
0
1
V
F
V
2
0
100
0
A/µs 1000
-di
F
/dt
0
200
400
600 A/µs 1000
800
-di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 2 Reverse recovery charge Q
r
Fig. 3 Peak reverse current I
RM
1.4
80
ns
gn
14
V
T
VJ
= 100°C
V
R
= 150V
0.85
T
VJ
= 100°C
I
F
= 15A
µs
0.80
t
fr
V
FR
0.75
1.2
K
f
t
rr
70
I
F
= 30A
I
F
= 15A
60
1.0
I
RM
Q
r
0.8
40
50
I
F
= 7.5A
w
de
si
12
V
FR
10
t
fr
8
0.70
ne
6
0.65
0.6
0
40
80
120 °C 160
T
VJ
30
0
r
4
600
-di
F
/dt
800
A/µs 1000
0
200
400
Fig. 4 Dynamic parameters Q
r
, I
RM
fo
200
400
0.60
600 A/µs 1000
800
di
F
/dt
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
10
K/W
1
Z
thJC
0.1
No
t
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.851
0.328
0.421
t
i
(s)
0.005
0.0003
0.041
0.01
0.001
0.00001
DSEC 30-03A
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
20070605a
2
-2
© 2007 IXYS All rights reserved
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