Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, METAL CAN-3
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Advanced Semiconductor, Inc. |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.3 A |
| Collector-emitter maximum voltage | 30 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 30 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 85 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.15 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Transistor component materials | GERMANIUM |
| Nominal transition frequency (fT) | 1.3 MHz |
| Base Number Matches | 1 |

| 2N43 | 2N43A | 2N525 | |
|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, METAL CAN-3 | Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, METAL CAN-3 | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknow | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.3 A | 0.3 A | 0.5 A |
| Collector-emitter maximum voltage | 30 V | 30 V | 30 V |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 30 | 30 | 30 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 |
| Maximum operating temperature | 85 °C | 85 °C | 100 °C |
| Package body material | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 0.15 W | 0.15 W | 0.225 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM |
| Transistor component materials | GERMANIUM | GERMANIUM | GERMANIUM |
| Nominal transition frequency (fT) | 1.3 MHz | 1.3 MHz | 1 MHz |
| Base Number Matches | 1 | 1 | 1 |
| Is it Rohs certified? | incompatible | incompatible | - |
| Maker | Advanced Semiconductor, Inc. | - | Advanced Semiconductor, Inc. |
| JESD-609 code | e0 | e0 | - |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - |