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BAS16_

Description
0.2 A, 75 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size210KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

BAS16_ Overview

0.2 A, 75 V, SILICON, SIGNAL DIODE

BAS16_ Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionGREEN, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.3500 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum repetitive peak reverse voltage75 V
Maximum average forward current0.2000 A
BAS16/MMBD4148/MMBD914
SURFACE MOUNT SWITCHING DIODE
Features
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic
Insertion
For General Purpose Switching Applications
High Conductance
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT-23
Dim
A
B
C
D
E
G
H
J
K
L
M
α
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Polarity: See Diagram
Marking Information: KA6, KA2, K5D; See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
@T
A
= 25°C unless otherwise specified
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
@ t = 1.0μs
@ t = 1.0s
I
FSM
P
d
R
θJA
T
j
, T
STG
Value
100
75
53
300
200
2.0
1.0
350
357
-65 to +150
All Dimensions in mm
Maximum Ratings
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
Min
75
Max
0.715
0.855
1.0
1.25
1.0
50
30
25
2.0
4.0
Unit
V
V
μA
μA
μA
nA
pF
ns
Test Condition
I
R
= 100μA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
j
= 150°C
V
R
= 25V, T
j
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
1.
2.
3.
I
R
C
T
t
rr
Device mounted on glass epoxy PCB 1.6” x 1.6” x 0.06”; mounting pad for the cathode lead min. 0.93in
2
.
Short duration test pulse used to minimize self-heating effect.
No Purposefully added Lead.
DS12003 Rev. 19 - 2
1 of 3
www.diodes.com
BAS16/MMBD4148/MMBD914
© Diodes Incorporated
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