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BAS40_

Description
DIODES INC. - BAS40-04-7-F - SCHOTTKY DIODE; 40mA; 40V; SOT-23
Categorysemiconductor    Discrete semiconductor   
File Size210KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAS40_ Overview

DIODES INC. - BAS40-04-7-F - SCHOTTKY DIODE; 40mA; 40V; SOT-23

BAS40/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
Low Forward Voltage Drop
Fast Switching
PN Junction Guard Ring for Transient and ESD
Protection
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High
Reliability
SOT-23
Dim
A
B
C
D
E
G
H
J
K
L
M
α
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method
208
Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe).
Polarity: See Diagrams Below
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Top View
All Dimensions in mm
BAS40 Marking: K43
BAS40-04 Marking: K44
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
I
FM
P
d
I
FSM
R
θJA
T
j
T
STG
BAS40-05 Marking: K45
BAS40-06 Marking: K46
Maximum Ratings
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Power Dissipation (Note 1)
Forward Surge Current (Note 1)
@ t < 1.0s
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Value
40
200
350
600
357
-55 to +125
-65 to +150
Unit
V
mA
mW
mA
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
C
T
t
rr
Min
40
Typ
20
4.0
Max
380
1000
200
5.0
5.0
Unit
V
mV
nA
pF
ns
Test Condition
I
R
= 10μA
t
p
< 300μs, I
F
= 1.0mA
t
p
< 300μs, I
F
= 40mA
t
p
< 300μs, V
R
= 30V
V
R
= 0V, f =1.0MHz
I
F
= I
R
= 10mA to I
R
= 1.0mA,
R
L
= 100Ω
Notes:
1.
2.
3.
Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead.
DS11006 Rev. 19 - 2
1 of 3
www.diodes.com
BAS40/ -04/ -05/ -06
© Diodes Incorporated

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