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BAW56_

Description
0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236
Categorysemiconductor    Discrete semiconductor   
File Size66KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

BAW56_ Overview

0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236

BAW56_ Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-3
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureCOMMON ANODE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.3100 W
Diode typeSignal diode
Maximum reverse recovery time0.0060 us
Maximum repetitive peak reverse voltage85 V
Maximum average forward current0.2500 A
BAW56
DUAL SURFACE MOUNT SWITCHING DIODE
Features
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
High Conductance
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT-23
Dim
A
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
B
C
B
C
Mechanical Data
TOP VIEW
D
E
G
H
J
K
L
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202,
Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Polarity: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
@T
A
= 25°C unless otherwise specified
E
D
G
H
K
J
D
M
L
M
α
All Dimensions in mm
Maximum Ratings
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t = 1.0μs
@ t = 1.0s
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
P
d
R
θJA
T
j
, T
STG
Value
100
75
53
300
2.0
1.0
350
357
-65 to +150
Unit
V
V
V
mA
A
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
Min
75
Max
0.715
0.855
1.0
1.25
2.5
50
30
25
2.0
4.0
Unit
V
Test Condition
I
R
= 2.5μA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
j
= 150°C
V
R
= 25V, T
j
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Forward Voltage
V
F
V
μA
μA
μA
nA
pF
ns
Reverse Current (Note 2)
I
R
Total Capacitance
Reverse Recovery Time
Notes:
1.
2.
3.
C
T
t
rr
Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration test pulse used to minimize self-heating effect.
No purposefully added lead.
DS12008 Rev. 16 - 2
1 of 3
www.diodes.com
BAW56
© Diodes Incorporated

BAW56_ Related Products

BAW56_ BAW56
Description 0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236 0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236
Number of terminals 3 3
Number of components 2 2
Processing package description ROHS COMPLIANT, PLASTIC PACKAGE-3 ROHS COMPLIANT, PLASTIC PACKAGE-3
state ACTIVE ACTIVE
packaging shape Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
Terminal location pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy
structure COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials silicon silicon
Maximum power consumption limit 0.3100 W 0.3100 W
Diode type Signal diode Signal diode
Maximum reverse recovery time 0.0060 us 0.0060 us
Maximum repetitive peak reverse voltage 85 V 85 V
Maximum average forward current 0.2500 A 0.2500 A
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