2N3764E3 datasheet, PDF - EEWORLD Datasheet

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2N3764E3: DescriptionSmall Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AB, TO-46, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size60KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N3764E3 Overview

Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AB, TO-46, 3 PIN

2N3764E3 Parametric

Parameter Name	Attribute value
Objectid	8059221292
package instruction	TO-46, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-206AB
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	115 ns
Maximum opening time (tons)	43 ns

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TECHNICAL DATA

PNP SWITCHING SILICON TRANSISTOR

Qualified per MIL-PRF-19500/396

Devices

2N3762

2N3762L

2N3763

2N3763L

2N3764

2N3765

Qualified Level

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol

V

CEO

V

CBO

V

EBO

I

C

2N3762*

2N3764

40

5.0

1.5

2N3763*

2N3765

60

Unit

Vdc

Adc

TO-39* (TO-205AD)

2N3762, 2N3763

2N3762*

1

2N3763*

Total Power Dissipation @ T

A

= +25

0

C

Operating & Storage Junction Temp. Range

P

T

op

,

T

stg

Symbol

1.0

2N3764

2

2N3765

0.5

W

0

-55 to +200

Max.

C

THERMAL CHARACTERISTICS

Characteristics

TO-5*

2N3762L, 2N3763L

Unit

2N3762*

2N3763*

2N3764

2N3765

TO-46* (TO-206AB)

2N3764, 2N3765

*See appendix A for

package outline

0

Thermal Resistance Junction-to-Case

60

88

C/W

R

θ

JC

*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices

1) Derate linearly at 5.71 mW/

0

C for T

A

> +25

0

C

2) Derate linearly at 2.86 mW/

0

C for T

A

> +25

0

C

ELECTRICAL CHARACTERISTICS (T

A

= 25

0

C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

I

C

= 10 mAdc

Collector-Base Cutoff Current

V

CB

= 20 Vdc

V

CB

= 30 Vdc

V

CB

= 40 Vdc

V

CB

= 60 Vdc

2N3762, 2N3764

2N3763, 2N3765

2N3762, 2N3764

2N3763, 2N3765

2N3762, 2N3764

2N3763, 2N3765

V

(BR)

CEO

40

60

100

10

Vdc

I

CBO

ηAdc

µAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

2N3764E3 Related Products

	2N3764E3	2N3762LE3	CSD17573Q5B_15	2N3762E3	2N3763U4	2N3765E3
Description	Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AB, TO-46, 3 PIN	Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN	CSD17573Q5B 30 V N-Channel NexFET Power MOSFETs	Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, U4, 3 PIN	Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AB, TO-46, 3 PIN
package instruction	TO-46, 3 PIN	TO-5, 3 PIN	-	CYLINDRICAL, O-MBCY-W3	CHIP CARRIER, R-XBCC-N3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compli	-	compliant	compliant	compliant
ECCN code	EAR99	EAR99	-	EAR99	EAR99	EAR99
Maximum collector current (IC)	1.5 A	1.5 A	-	1.5 A	1.5 A	1.5 A
Collector-emitter maximum voltage	40 V	40 V	-	40 V	60 V	60 V
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30	-	30	20	20
JEDEC-95 code	TO-206AB	TO-5	-	TO-205AD	-	TO-206AB
JESD-30 code	O-MBCY-W3	O-MBCY-W3	-	O-MBCY-W3	R-XBCC-N3	O-MBCY-W3
Number of components	1	1	-	1	1	1
Number of terminals	3	3	-	3	3	3
Package body material	METAL	METAL	-	METAL	UNSPECIFIED	METAL
Package shape	ROUND	ROUND	-	ROUND	RECTANGULAR	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	CHIP CARRIER	CYLINDRICAL
Polarity/channel type	PNP	PNP	-	PNP	PNP	PNP
surface mount	NO	NO	-	NO	YES	NO
Terminal form	WIRE	WIRE	-	WIRE	NO LEAD	WIRE
Terminal location	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	-	SILICON	SILICON	SILICON
Maximum off time (toff)	115 ns	115 ns	-	115 ns	115 ns	115 ns
Maximum opening time (tons)	43 ns	43 ns	-	43 ns	43 ns	43 ns

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