EEWORLDEEWORLDEEWORLD

Part Number

Search

2SK3322-AZ

Description
Power Field-Effect Transistor, 5.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size91KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric Compare View All

2SK3322-AZ Overview

Power Field-Effect Transistor, 5.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN

2SK3322-AZ Parametric

Parameter NameAttribute value
MakerNEC Electronics
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)10.7 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)5.5 A
Maximum drain-source on-resistance2.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3322
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3322 is N-Channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, and designed for high voltage
applications such as switching power supply, AC
adapter.
ORDERING INFORMATION
PART NUMBER
2SK3322
2SK3322-S
2SK3322-ZJ
2SK3322-ZK
PACKAGE
TO-220AB (MP-25)
TO-262
TO-263(MP-25ZJ)
TO-263(MP-25ZK)
FEATURES
Low gate charge :
Q
G
= 15 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 5.5 A)
Gate voltage rating :
±30
V
Low on-state resistance :
R
DS(on)
= 2.2
MAX. (V
GS
= 10 V, I
D
= 2.8 A)
Avalanche capability ratings
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
600
±30
±5.5
±20
1.5
65
150
−55
to +150
4.0
10.7
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
10
µ
s, Duty Cycle
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω,
V
GS
= 20
0 V
The information contained in this document is being issued in advance of the production cycle for the
product. The parameters for the product may change before final production or NEC Electronics
Corporation, at its own discretion, may withdraw the product prior to its production.
Not all products and/or types are availabe in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14114EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999, 2000

2SK3322-AZ Related Products

2SK3322-AZ 2SK3322-ZK-AZ
Description Power Field-Effect Transistor, 5.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-25, 3 PIN Power Field-Effect Transistor, 5.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZK, 3 PIN
Maker NEC Electronics NEC Electronics
Parts packaging code TO-220AB D2PAK
package instruction FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 10.7 mJ 10.7 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V
Maximum drain current (ID) 5.5 A 5.5 A
Maximum drain-source on-resistance 2.2 Ω 2.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-263AB
JESD-30 code R-PSFM-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 20 A 20 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
How to treat obsessive compulsive disorder.
Listing some obsessive-compulsive things, I think I am seriously ill. 1) The board we made uses an A8 processor. When it starts, the serial port will output three A's and a line feed. This part is act...
cl17726 Talking
Is this a website bug?? or a feature??
As shown in the forum homepage, the left navigation section should normally have 6 recent posts with pictures. When you move the mouse over the numbers, it will switch to the corresponding pictures. C...
wsmysyn Suggestions & Announcements
Happy New Year everyone..
Happy New Year to everyone. I wish all my forum friends a happy New Year on the first day of the Year of the Tiger........
wangjiafu1985 Talking
Domestic mobile phones still fail to rank among the top three in the market
According to the China data of IDC Asia PacificMobile Phone Market Quarterly Tracking Report (2006 Q3), the overallshipment volume of China's mobile phone market in Q3 2006 was about 31.7 million unit...
noce RF/Wirelessly
stm32 compilation problem help
When compiling with KEIL UV4, there is a problem of repeated definition of TYPE.H and STM32F10X.H. I used the V2.0.1 library before, and now I use the V3.5.0 library. I need help from experts and it n...
wanyong19860402 stm32/stm8
Data acquisition and display interface circuit simulation design based on CPLD1
Abstract: Conventional data acquisition and display methods use CPU or DSP to control the analog/digital conversion of data acquisition through software, which will frequently interrupt the operation ...
eeleader FPGA/CPLD

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1907  337  1385  2446  749  39  7  28  50  16 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号