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DF005M_1

Description
1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size70KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

DF005M_1 Overview

1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

DF005M - DF10M
1.0A GLASS PASSIVATED BRIDGE RECTIFIERS
Features
·
·
·
·
·
·
Glass Passivated Die Construction
Low Forward Voltage Drop, High Current Capability
Surge Overload Rating to 50A Peak
Designed for Printed Circuit Board Applications
UL Listed Under Recognized Component Index, File
Number E94661
Lead Free Finish, RoHS Compliant (Date Code 0532+)
(Note 3)
H
B
A
E
DF-M
Dim
C
Min
7.40
6.20
0.22
1.27
7.60
3.81
8.13
2.40
5.00
0.46
1.40
2.10
Max
7.90
6.50
0.30
2.03
8.90
4.69
8.51
2.60
5.20
0.58
1.56
2.34
A
B
C
D
E
G
H
Mechanical Data
·
·
·
·
·
·
·
Case: DF-M
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Tin. Solder Plated Leads,
Solderable per MIL-STD-202, Method 208
e
3
Polarity: As Marked on Case
Marking: Type Number, See Page 3
Weight: 0.38 grams (approximate)
J
L
K
D
G
J
K
L
M
N
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
A
= 40°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms
single half-sine-wave superimposed on rated load
Forward Voltage (per element)
@ I
F
= 1.0 A
Peak Reverse Current
@ T
A
= 25°C
at Rated DC Blocking Voltage (per element) @ T
A
= 125°C
I
2
t Rating for Fusing (t<8.3ms)
Typical Total Capacitance per element (Note 1)
Typical Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Notes:
@ T
A
= 25°C unless otherwise specified
Symbol
V
RMM
V
RWM
V
R
V
RMS
I
O
I
FSM
V
FM
I
RM
I
2
t
C
T
R
qJA
T
j
, T
STG
DF
005M
50
35
DF
01M
100
70
DF
02M
200
140
DF
04M
400
280
1.0
50
1.1
10
500
10.4
25
40
-65 to +150
DF
06M
600
420
DF
08M
800
580
DF
10M
1000
700
Unit
V
V
A
A
V
µA
A
2
s
pF
°C/W
°C
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal Resistance, junction to ambient, measured on PC board with 5.0
2
mm (0.03mm thick) land areas.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DS21201 Rev. 14 - 2
1 of 3
www.diodes.com
DF005M-DF10M
ã
Diodes Incorporated
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