2SK1959-AZ datasheet, PDF - EEWORLD Datasheet

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2SK1959-AZ: DescriptionPower Field-Effect Transistor, 2A I(D), 16V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size60KB，6 Pages; ManufacturerNEC Electronics

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2SK1959-AZ Overview

Power Field-Effect Transistor, 2A I(D), 16V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

2SK1959-AZ Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	GATE PROTECTED
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	16 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	4 A
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK1959

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

The 2SK1959 is an N-channel vertical MOS FET. Because

it can be driven by a voltage as low as 1.5 V and it is not

necessary to consider a drive current, this FET is ideal as an

actuator for low-current portable systems such as headphone

stereos and video cameras.

PACKAGE DIMENSIONS (in mm)

4.5 ±0.1

1.6 ±0.2

1.5 ±0.1

• Gate can be driven by 1.5 V

• Low ON resistance

DS(on)

= 3.2

Ω

MAX.

DS(on)

= 0.5

Ω

MAX.

@ V

= 1.5 V, I

= 50 mA

@ V

= 4.0 V, I

= 1.0 A

0.8 MIN.

FEATURES

0.42 ±0.06

1.5 0.47

±0.06

3.0

0.41

+0.03

–0.05

Marking: NQ

EQUIVALENT CURCUIT

Drain (D)

Gate (G)

Gate

protection

diode

Source (S)

Internal

diode

PIN CONNECTIONS

S: Source

D: Drain

G: Gate

ABSOLUTE MAXIMUM RATINGS (T

= 25 ˚C)

PARAMETER

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

SYMBOL

DSS

GSS

D(DC)

D(pulse)

stg

≤

10 ms, duty cycle

≤

50 %

16 cm

0.7 mm ceramic substrate used

= 0

TEST CONDITIONS

RATING

±7.0

±2.0

±4.0

2.0

150

–55 to +150

UNIT

˚C

Document No. D11222EJ2V0DS00 (2nd edition)

Date Published June 1996 P

Printed in Japan

4.0 ±0.25

2.5 ±0.1

1996

2SK1959-AZ Related Products

	2SK1959-AZ
Description	Power Field-Effect Transistor, 2A I(D), 16V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Maker	NEC Electronics
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	GATE PROTECTED
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	16 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	4 A
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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