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2SC4540(TE12L,F)

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size177KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC4540(TE12L,F) Overview

Small Signal Bipolar Transistor

2SC4540(TE12L,F) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
2SC4540
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC4540
Power Amplifier Applications
Power Switching Applications
Low saturation voltage: V
CE (sat)
= 0.5 V (max) (I
C
= 500 mA)
High speed switching time: t
stg
= 0.4
μs
(typ.)
Small flat package
P
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1735
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
P
C
(Note 1)
T
j
T
stg
Rating
80
50
6
1
0.2
500
1000
150
−55
to 150
Unit
V
V
V
A
A
mW
mW
°C
°C
JEDEC
JEITA
TOSHIBA
SC-62
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm
2
× 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21

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