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DTD114ES

Description
500mA / 50V Digital transistors (with built-in resistors)
CategoryDiscrete semiconductor    The transistor   
File Size76KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DTD114ES Overview

500mA / 50V Digital transistors (with built-in resistors)

DTD114ES Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)56
JESD-30 codeR-PSIP-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.3 V
DTD114EK / DTD114ES
Transistors
500mA / 50V Digital transistors
(with built-in resistors)
DTD114EK / DTD114ES
Applications
Inverter, Interface, Driver
External dimensions
(Unit : mm)
DTD114EK
2.9
0.4
1.1
0.8
3.0
Feature
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input resistors
(see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
(3)
1.6
2.8
(2)
(1)
0.3Min.
0.95 0.95
0.15
1.9
ROHM : SMT3
EIAJ : SC-59
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Addreviated symbol : F24
DTD114ES
4.0
2.0
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
ROHM : SPT
EIAJ : SC-72
(15Min.)
3Min.
0.45
2.5
5.0
(1) (2) (3)
0.5
0.45
(1) GND
(2) OUT
(3) IN
Packaging specifications
Package
Packaging type
Code
SMT3
Taping
SPT
Taping
T146
3000
TP
5000
Part No.
DTD114EK
DTD114ES
Basic ordering
unit (pieces)
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Equivalent circuit
Limits
Unit
R
1
OUT
Symbol
V
CC
V
IN
I
C
P
D
Tj
Tstg
200
DTD114EK DTD114ES
50
−10
to
+40
500
300
150
−55
to
+150
V
V
mA
mW
C
C
IN
IN
R
2
GND
OUT
GND
R
1
=10kΩ R
2
=10kΩ
Rev.A
1/2

DTD114ES Related Products

DTD114ES DTD114EK_1
Description 500mA / 50V Digital transistors (with built-in resistors) 500mA / 50V Digital transistors (with built-in resistors)

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