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DTD123ES

Description
500mA / 50V Digital transistors (with built-in resistors)
CategoryDiscrete semiconductor    The transistor   
File Size55KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DTD123ES Overview

500mA / 50V Digital transistors (with built-in resistors)

DTD123ES Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)39
JESD-30 codeR-PSIP-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.3 V
DTD123EK / DTD123ES
Transistors
500mA / 50V Digital transistors
(with built-in resistors)
DTD123EK / DTD123ES
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for
operation, making the device design easy.
External dimensions
(Unit : mm)
DTD123EK
2.9
0.4
(3)
1.6
2.8
1.1
0.8
(2)
(1)
0.95 0.95
0.15
1.9
ROHM : SMT3
EIAJ : SC-59
(1) GND
(2) IN
(3) OUT
Each lead has same dimension
Abbreviated symbol: F22
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
DTD123ES
3.0
4.0
2.0
(15Min.)
Package specifications
Package
Packaging type
Code
SMT3
Taping
T146
3000
SPT
Taping
3Min.
0.45
TP
5000
ROHM : SPT
EIAJ : SC-72
2.5
5.0
(1) (2) (3)
0.5
0.45
Part No.
DTD123EK
DTD123ES
Basic ordering unit (pieces)
(1) GND
(2) OUT
(3) IN
Taping specifications
Abbreviated symbol: D123ES
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
C
Pd
Tj
Tstg
200
150
−55
to
+150
Limits
DTD123EK DTD123ES
50
−10
to
+12
500
300
Unit
Equivalent circuit
R
1
OUT
V
V
mA
mW
C
IN
R
2
GND
IN
GND
OUT
C
R
1
=R
2
=2.2kΩ
Rev.B
0.3Min.
1/2

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