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DTDG23YP

Description
1A / 60V Digital transistor (with built-in resistors and zener diode)
CategoryDiscrete semiconductor    The transistor   
File Size54KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DTDG23YP Overview

1A / 60V Digital transistor (with built-in resistors and zener diode)

DTDG23YP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Reach Compliance Codecompliant
Other featuresDIGITAL
Maximum collector current (IC)1 A
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)300
JESD-30 codeR-PSSO-F3
JESD-609 codee2
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
DTDG23YP
Transistors
1A / 60V Digital transistor
(with built-in resistors and zener diode)
DTDG23YP
Applications
Inverter, Interface, Driver
Features
1) High DC current gain. (Min. 300 at V
O
/ I
O
=2V /
0.5A)
2) Low Vo(on). (Typ. 0.4V at I
O
/ I
I
=500mA / 5mA)
3) Built-in zener diode gives strong protection against
reverse surge by L-load (an inductive load).
Structure
NPN epitaxial planar silicon transistor
(with built-in resistors and zener diode)
Packaging specifications
Package
Packaging type
Code
Basic ordering unit (pieces)
MPT3
Taping
T100
1000
External dimensions
(Unit : mm)
MPT3
4.5
1.6
0.5
1.5
(1)
(2)
(3)
1.0
2.5
4.0
0.4
0.4
1.5
0.5
1.5
3.0
0.4
(1)Base
(2)Collector
(3)Emitter
Abbreviated symbol : E02
Part No.
DTDG23YP
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Collector current
Symbol
V
CC
V
IN
I
C
I
CP
Pd
Tj
Tstg
Limits
60±10
−6
to
+40
1
2
1
1.5
2
150
−55
to
+150
Unit
Equivalent circuit
OUT
V
A
A
W
C
C
IN
R
1
R
2
GND
IN
OUT
Power dissipation
Junction temperature
Storage temperature
1 Pw
<
10ms, Duty cycle
<
2%
2 When mounted on 40 40 0.7mm ceramic board.
+
+
GND
R
1
=2.2kΩ R
2
=10kΩ
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Emitter-base resistance
Characteristics of built-in transistor
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
Min.
2
300
1.54
7
Typ.
80
2.2
10
Max.
0.3
0.4
3.6
0.5
2.86
13
Unit
V
V
mA
µA
MHz
kΩ
kΩ
Conditions
V
CC
=5V
, I
O
=100µA
V
O
=0.4V
, I
O
=100mA
I
O
/I
I
=500mA/5mA
V
I
=5V
V
CC
=40V
, V
I
=0V
V
O
=2V
, I
O
=500mA
V
CE
=5V
, I
E
=
−0.1A
, f=30MHz
Rev.B
1/2

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