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MURB1610CT_1

Description
8 A, 200 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size73KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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MURB1610CT_1 Overview

8 A, 200 V, SILICON, RECTIFIER DIODE

MURB1610CT / MURB1620CT
16A SURFACE MOUNT SUPER-FAST RECTIFIER
Features
·
·
·
·
·
·
·
Glass Passivated Die Construction
Diffused Junction
Super-Fast Recovery Times for High Efficiency
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 100A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 4)
1
2
3
4
E
A
G
H
J
Dim
A
B
C
D
E
G
D
2
PAK
Min
9.65
14.60
0.51
2.29
4.37
1.14
1.14
8.25
0.30
2.03
2.29
Max
10.69
15.88
1.14
2.79
4.83
1.40
1.40
9.25
0.64
2.92
2.79
B
Mechanical Data
·
·
·
·
·
·
·
Case: D
2
PAK
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Marking: See Page 3
Weight: 1.7 grams (approximate)
PIN 1
PIN 3
M
D
C
L
PIN 2 & 4
K
H
J
K
L
M
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
C
= 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Maximum Recovery Time (Note 2)
Typical Total Capacitance (Note 3)
Typical Thermal Resistance Junction to Case
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
T
R
qJC
T
j,
T
STG
MURB1610CT
100
70
16
100
0.975
5.0
250
30
85
1.5
-65 to +150
MURB1620CT
200
140
Unit
V
V
A
A
V
mA
ns
pF
°C/W
°C
@ I
F
= 8.0A
@ T
A
= 25°C
@ T
A
= 150°C
Unit mounted on PC board with 5.0 mm
2
(0.013 mm thick) copper pad as heat sink.
Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A.
Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DS14005 Rev. 5 - 2
1 of 3
www.diodes.com
MURB1610CT/MURB1620CT
ã
Diodes Incorporated

MURB1610CT_1 Related Products

MURB1610CT_1 MURB1610CT-13 MURB1620CT-13 MURB1620CT
Description 8 A, 200 V, SILICON, RECTIFIER DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE

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