CHENMKO ENTERPRISE CO.,LTD
SMALL FLAT
PNP Epitaxial Transistor
VOLTAGE 30 Volts
APPLICATION
* Power driver and Dc to DC convertor .
2SB772PT
CURRENT 3 Ampere
FEATURE
* Small flat package. (SC-62/SOT-89)
* Low saturation voltage V
CE(sat)
=-0.5V(max.)(I
C
=-2A)
* High speed switching time: t
stg
= 1.0uSec (typ.)
* PC= 1.5 W (mounted on ceramic substrate).
* High saturation current capability.
4.6MAX.
1.7MAX.
SC-62/SOT-89
1.6MAX.
0.4+0.05
CONSTRUCTION
2.5+0.1
+0.08
0.45-0.05
+0.08
0.40-0.05
1.50+0.1
+0.08
0.40-0.05
1.50+0.1
* PNP Switching Transistor
MARKING
*
hFE Classification Q: Q72
P: 772
E: E72
1
1 Base
2
3
CIRCUIT
2 Collector ( Heat Sink )
3 Emitter
0.8MIN.
4.6MAX.
1
B
2
C
3
E
Dimensions in millimeters
SC-62/SOT-89
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Peak Collector Current
Peak Base Current
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
T
A
≤
25
O
C; Note 1
CONDITION
Open Emitter
Open Base
Open Collector
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
TOT
T
STG
T
J
T
AMB
MIN.
-
-
-
-
-
-
-
-55
-
-55
MAX.
-40
-30
-5
-3
-3
-0.5
1500
+150
+150
+150
UNITS
Volts
Volts
Volts
Amps
Amps
Amps
mW
o
C
C
C
o
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2003-8
RATING CHARACTERISTIC CURVES ( 2SB772PT )
CHARACTERISTICS
( At T
A
= 25 C unless otherwise noted )
PARAMETERS
Collector Cut-off Current
Emitter Cut-off Current
CONDITION
I
E
=0; V
CB
=-30V
I
C
=0; V
EB
=-3V
V
CE
=-2V; Note 1
I
C
=-0.02A
I
C
=-1.0A;
Note 2
I
C
=-2A; I
B
=-0.2A
I
C
=-2A; I
B
=-0.2A
I
E
=ie=0; V
CB
=-10V;
f=1MHz
I
C
=-0.1A; V
CE
=-5.0V;
f=100MHz
SYMBOL
I
CBO
I
EBO
MIN.
-
-
TYPE
-
-
MAX.
-1.0
-1.0
UNITS
uA
uA
o
DC Current Gain
h
FE
30
100
-
-
-
-
-
160
-0.3
-1.0
55
100
-
500
-0.5
-2.0
-
-
Volts
Volts
pF
MHz
Collector-Emitter Saturation
Voltage
Base-Emitter Saturatio
Voltage
Collector Capacitance
Transition Frequency
V
CEsat
V
BEsat
C
C
f
T
SWITCHING TIMES
( Between 10% and 90% levels )
PARAMETERS
Turn-on Time
Storage Time
Fall Time
I
B1
20uSec
CONDITION
OUTPUT
SYMBOL
t
on
t
s
t
f
MIN.
-
-
-
TYPE
0.1
1.0
0.1
MAX.
-
-
-
UNITS
uSec
uSec
uSec
I
B2
INPUT
I
B2
30 ohmS
-30V
I
B1
-I
B1
=I
B2
=0.05A
Duty cycle<1%
Note :
1. Pulse test: tp
≤
300uSec;
δ ≤
0.02.
2. hFE(2) Classification Q: 100 to 200, P: 160 to 320, E: 250 to 500.
RATING CHARACTERISTIC CURVES ( 2SB772PT )
Typical Electrical Characteristics
Figure 1. C
C
- Reverse V
CB
3000
3000
Figure 2. Cutoff
Frequency
- I
C
COLLECTOR CAPACITANCE C
C
(pF)
V
CE
=-5V
1000
1000
100
CUTOFF FREQUENCY (MHz)
100
10
10
1
-0.1
-0.3
-1.0
-3.0
-10
-30
-100
1
-1
-10
-100
-1000
COLLECTOR-BASE REVERSE BIAS VOLTAGE V
CB
(V)
COLLECTOR CURRENT I
C
(mA)
Figure 3. h
FE
- I
C
COLLECTOR POWER DISSIPATION P
C
(W)
1000
500
COMMON EMITTER
V
CE
=-2V
Figure 4. P
C
- T
A
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
(1)
(1) Mounted on ceramic substrate
( 250mm
2
x0.8t )
(2) No heat sink
DC CURRENT GAIN h
FE
300
100
(2)
50
30
10
-10
-30
-100
-300
-1000
-3000
0
20
40
60
80
100
120
140
160
COLLECTOR CURRENT I
C
(mA)
AMBIENT TEMPERATURE T
A
(
O
C)
Figure 5. V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION VOLTAGE
V
CE(sat)
(V)
-1
-0.5
-0.3
-10
Figure 6. V
BE(sat)
- I
C
BASE-EMITTER SATURATION VOLTAGE
V
BE(sat)
(V)
COMMON EMITTER
COMMON EMITTER
I
C
/I
B
=10
-5
-3
I
C
/I
B
=10
-0.1
-1
-0.05
-0.03
-0.5
-0.3
-0.01
-10
-30
-100
-300
-1000
-3000
-0.1
-10
-30
-100
-300
-1000
-3000
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
RATING CHARACTERISTIC CURVES ( 2SB772PT )
Typical Electrical Characteristics
Figure 9. Safe Operation Area
-30000
-10000
-5000
-3000
-1000
-500
-300
-100
-50
-30
-10
-0.1
Single nonrepetitive pulse
T
A
=25
O
C
Curve must be derated linearly
with increase in temperature
Tested without a substrate
-0.3
-1.0
-3.0
-10
-30
-100
COLLECTOR CURRENT I
C
(mA)
1 mS
100 mS
1S
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
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