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DMN100_1

Description
1100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size64KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

DMN100_1 Overview

1100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

DMN100_1 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage30 V
Processing package descriptionGREEN, PLASTIC, SC-59, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption0.5000 W
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current1.1 A
Maximum drain on-resistance0.2400 ohm
Lead-free Green
DMN100
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
·
·
·
·
Extremely Low On-Resistance:
170mW @ V
GS
= 4.5V
High Drain Current: 1.1A
Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
Lead Free By Design/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
ESD Protected Gate
"Green" Device (Note 3)
E
G
D
G
H
D
TOP VIEW
S
B
C
A
SC-59
Dim
A
B
C
D
E
G
H
K
J
Drain
Min
0.30
1.40
2.50
0.85
0.30
1.70
2.70
¾
1.00
0.55
0.10
Max
0.50
1.80
3.00
1.05
0.70
2.10
3.10
0.10
1.40
0.70
0.35
Mechanical Data
·
·
·
·
·
·
·
·
Case: SC-59
Case Material - Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: See Last Page
Ordering & Date Code Information: See Last Page
Weight: 0.008 grams (approximate)
Gate
Protection
Diode
Source
Gate
M
L
J
K
L
M
All Dimensions in mm
ESD protected
EQUIVALENT CIRCUIT
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
@ T
A
= 25°C unless otherwise specified
Symbol
V
DSS
Continuous
Continuous
Pulsed
V
GSS
I
D
P
d
R
qJA
T
j
, T
STG
DMN100
30
±20
1.1
4.0
500
250
-55 to +150
Units
V
V
A
mW
K/W
°C
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1. Pulse width
£
300ms, duty cycle
£
2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30049 Rev. 6 - 2
1 of 3
www.diodes.com
DMN100
ã
Diodes Incorporated
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