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IMN10_1

Description
0.1 A, 80 V, 3 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size144KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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IMN10_1 Overview

0.1 A, 80 V, 3 ELEMENT, SILICON, SIGNAL DIODE

IMN10
Diodes
Switching diode
IMN10
Application
Ultra high speed switching
External dimensions
(Unit : mm)
Land size figure
(Unit : mm)
19
2.9±0.2
0.3±0.1 各リードとも同寸法
Each lead has same dimension
0.05
0.15±0.1
    0.06
0.95
0.95
1.6
2.8±0.2
+0.2
-0.1
1.0MIN.
Features
1) Small mold type. (SMD6)
2) High reliability
(4)
(5)
(6)
0.45
0.6
0.35 0.35 0.45
0½0.1
0.3½0.6
0.8MIN.
SMD6
Construction
Silicon epitaxial planar
(3)
(2)
1.9±0.2
(1)
0.8±0.1
1.1±0.2
0.1
0.95
0.95
Structure
ROHM : SMD6
JEDEC :S0T-457
JEITA : SC-74
week code
1Pin Mark
Taping specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.1
      0
1.75±0.1
0.3±0.1
3.5±0.05
3.2±0.1
5.5±0.2
8.0±0.2
3.2±0.1
4.0±0.1
φ1.05MIN
0½0.5
3.2±0.1
1.35±0.1
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (Single)
Forward current (Double)
Average rectified forward current (single)
Surge current
(t=1us)
Power dissipation (TOTAL)(*1)
Junction temperature
Storage temperature
(*1) Not exceed 200mW per element.
Symbol
V
RM
V
R
I
FM
I
FM
Io
I
surge
Pd
Tj
Tstg
Limits
80
80
300
450
100
4
300
150
-55 to +150
Unit
V
V
mA
mA
mA
A
mW
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V
F
I
R
Ct
trr
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.2
0.1
3.5
4
Unit
V
µA
pF
ns
Conditions
I
F
=100mA
V
R
=70V
V
R
=6V , f=1MHz
V
R
=6V , IF=5mA , RL=50Ω
Rev.C
2.4
1/2

IMN10_1 Related Products

IMN10_1 IMN10
Description 0.1 A, 80 V, 3 ELEMENT, SILICON, SIGNAL DIODE 0.1 A, 80 V, 3 ELEMENT, SILICON, SIGNAL DIODE

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