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IRLIB4343PBF

Description
19 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size204KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

IRLIB4343PBF Overview

19 A, 55 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRLIB4343PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-220AB
package instructionLEAD FREE, PLASTIC, TO-220, FULL PACK-3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)130 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)19 A
Maximum drain current (ID)19 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)39 W
Maximum pulsed drain current (IDM)80 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 95755
DIGITAL AUDIO MOSFET
IRLIB4343PbF
Key Parameters
Features
l
l
l
l
l
l
l
l
Advanced Process Technology
Key Parameters Optimized for Class-D Audio
Amplifier Applications
Low R
DSON
for Improved Efficiency
Low Q
g
and Q
sw
for Better THD and Improved
Efficiency
Low Q
rr
for Better THD and Lower EMI
175°C Operating Junction Temperature for
Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
Lead-Free
V
DS
R
DS(ON)
typ. @ V
GS
= 10V
R
DS(ON)
typ. @ V
GS
= 4.5V
Q
g
typ.
T
J
max
55
42
57
28
175
V
m
:
m
:
nC
°C
D
G
S
TO-220 Full-Pak
Description
This Digital Audio HEXFET
®
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Max.
55
±20
19
13
80
39
20
0.26
-40 to + 175
10lb in (1.1N m)
Units
V
A
c
W
W/°C
°C
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Mounting torque, 6-32 or M3 screw
x
x
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
f
Parameter
Typ.
–––
–––
Max.
3.84
65
Units
°C/W
Junction-to-Ambient
f
Notes

through
…
are on page 7
www.irf.com
1
8/24/04
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