MMBTA92
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
·
·
·
·
·
·
·
·
·
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBTA42)
Ideal for Medium Power Amplification and Switching
Lead Free/RoHS Compliant (Note 4
)
Qualified to AEC-Q101 Standards for High Reliability
B
TOP VIEW
E
E
D
G
H
K
J
L
C
B
C
A
SOT-23
Dim
A
B
C
D
E
G
M
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking (See Page 2): K3R
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
H
J
K
L
M
a
C
B
E
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
MMBTA92
-300
-300
-5.0
-500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector Current (Note 1) (Note 3)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
-300
-300
-5.0
¾
¾
25
40
25
¾
¾
¾
50
Max
¾
¾
¾
-250
-100
Unit
V
V
V
nA
nA
Test Condition
I
C
= -100mA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -100mA, I
C
= 0
V
CB
= -200V, I
E
= 0
V
CE
= -3.0V, I
C
= 0
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -30mA, V
CE
= -10V
I
C
= -20mA, I
B
= -2.0mA
I
C
= -20mA, I
B
= -2.0mA
V
CB
= -20V, f = 1.0MHz, I
E
= 0
V
CE
= -20V, I
C
= -10mA,
f = 100MHz
h
FE
V
CE(SAT)
V
BE(SAT)
C
cb
f
T
¾
-0.5
-0.9
6.0
¾
¾
V
V
pF
MHz
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance
rating (R
qJA
), power dissipation rating (P
d
) and power derating curve (figure 1).
4. No purposefully added lead.
DS30060 Rev. 10 - 2
1 of 3
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MMBTA92
ã
Diodes Incorporated
Ordering Information
Device
MMBTA92-7-F
Notes:
(Note 5)
Packaging
SOT-23
Shipping
3000/Tape & Reel
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3R
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
March
3
2001
M
Apr
4
K3R = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2002
N
May
5
YM
2003
P
Jun
6
2004
R
Jul
7
2005
S
Aug
8
2006
T
Sep
9
2007
U
Oct
O
2008
V
Nov
N
2009
W
Dec
D
1.0
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
350
P
D
, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
I
C
I
B
= 10
T
A
= 150°C
T
A
= 25°C
T
A
= -50°C
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
DS30060 Rev. 10 - 2
2 of 3
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MMBTA92
10000
1.0
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
V
CE
= 5V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
V
CE
= 5V
T
A
= -50°C
h
FE
, DC CURRENT
GAIN (NORMALIZED)
1000
T
A
= 150°C
100
T
A
= -50°C
10
T
A
= 25°C
T
A
= 25°C
T
A
= 150°C
1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs
Collector Current
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs Collector Current
100
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
10
1
1
I
C
, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs
Collector Current
10
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at
www.diodes.com
are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30060 Rev. 10 - 2
3 of 3
www.diodes.com
MMBTA92
Embedded System
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