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SBL1030_1

Description
10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size157KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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SBL1030_1 Overview

10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC

PART OBSOLETE - NO ALTERNATE PART
SBL1030 - SBL1060
10A SCHOTTKY BARRIER RECTIFIER
Features
OBSOLETE – PART DISCONTINUED
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 3)
C
K
B
D
A
Pin 1
Pin 2
TO-220AC
L
M
Dim
A
B
C
D
E
G
Min
14.48
10.00
2.54
5.90
2.80
12.70
0.69
3.54
4.07
1.15
0.30
2.04
4.83
Max
15.75
10.40
3.43
6.40
3.93
14.27
0.93
3.78
4.82
1.39
0.50
2.79
5.33
Mechanical Data
·
·
·
·
·
·
·
Case: TO-220AC
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity: See Diagram
Terminals: Finish – Bright Tin. Solderable per
MIL-STD-202, Method 208
Marking: Type Number
Weight: 2.24 grams (approx.)
J
TE
N
G
R
P
Pin 1 +
Pin 2 -
+
Case
E
J
K
L
M
N
P
R
LE
Symbol
V
RRM
V
RWM
V
R
SBL
1030
30
21
SBL
1035
35
24.5
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
qJC
T
j,
T
STG
0.60
(Note 2)
(Note 1)
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
O
@ T
A
= 25°C unless otherwise specified
BS
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
SBL
1040
40
28
10
250
SBL
1045
45
31.5
SBL
1050
50
35
SBL
1060
60
42
Unit
V
V
A
A
Average Rectified Output Current
O
@ T
C
= 95°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
Thermal Resistance Junction to Case
Operating and Storage Temperature Range
Notes:
@ I
F
= 10A, T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 100°C
0.75
1.0
50
700
3.5
-65 to +150
V
mA
pF
°C/W
°C
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
SBL1030 - SBL1060
DS23042 Rev.
5
-
4
1 of 3
www.diodes.com
August 2015
ã
Diodes Incorporated

SBL1030_1 Related Products

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Description 10 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC

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