EEWORLDEEWORLDEEWORLD

Part Number

Search

SBL1630CT_1

Description
16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size83KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

SBL1630CT_1 Overview

16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB

SBL1630CT_1 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionPLASTIC PACKAGE-3
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage60 V
Maximum average forward current16 A
Maximum non-repetitive peak forward current175 A
NOT RECOMMENDED
FOR NEW DESIGN
SBL1630CT - SBL1660CT
16A SCHOTTKY BARRIER RECTIFIER
L
B
C
D
K
A
M
Features
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 3)
TO-220AB
Dim
Min
Max
A
14.48 15.75
B
10.00 10.40
C
2.54
3.43
D
5.90
6.40
E
2.80
3.93
G
12.70 14.27
H
2.40
2.70
J
0.69
0.93
K
3.54
3.78
L
4.07
4.82
M
1.15
1.39
N
0.30
0.50
P
2.04
2.79
All Dimensions in mm
1
2
3
Mechanical Data
Case: TO-220AB
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish –Tin. Solderable per MIL-STD-202,
Method 208
Polarity: As Marked on Body
Marking: Type Number
Weight: 2.24 grams (approximate)
J
E
G
N
H H
Pin 1 +
Pin 2 -
Pin 3 +
+
Case
P
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
C
= 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage Drop
@ I
F
= 8.0A, T
C
= 25°C
Peak Reverse Current
@T
C
= 25°C
at Rated DC Blocking Voltage
@ T
C
= 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
θ
JC
T
j,
T
STG
SBL
SBL
SBL
SBL
SBL
SBL
1630CT 1635CT 1640CT 1645CT 1650CT 1660CT
30
21
35
24.5
40
28
16
250
0.55
0.5
50
700
3.5
-65 to +150
0.70
45
31.5
50
35
60
42
Unit
V
V
A
A
V
mA
pF
°C/W
°C
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see
EU Directive Annex Notes 5 and 7.
DS23014 Rev. 8 - 3
1 of 3
www.diodes.com
SBL1630CT - SBL1660CT
© Diodes Incorporated

SBL1630CT_1 Related Products

SBL1630CT_1 SBL1660CT SBL1630CT SBL1640CT
Description 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB 8 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB 8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 862  1755  1022  516  2284  18  36  21  11  46 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号