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UG10012

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size108KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

UG10012 Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

NOT RECOMMENDED
FOR NEW DESIGN
UG1001 - UG1005
1.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER
Features
Glass Passivated Die Construction
Ultra-Fast Switching for High Efficiency
Surge Overload Rating to 30A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
Case: DO-41
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Tin. Plated Leads Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Type Number
Ordering Information: See Page 3
Weight: 0.35 grams (approximate)
DO-41
Dim
A
B
C
D
Min
25.40
4.06
0.71
2.00
Max
5.21
0.864
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 5)
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
A
= 55°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage
@ I
F
= 1.0A
Peak Reverse Current
@ T
A
= 25°C
at Rated DC Blocking Voltage (Note 5)
@ T
A
= 100°C
Reverse Recovery Time (Note 3)
Typical Total Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
T
R
θ
JA
T
j,
T
STG
UG1001
50
35
UG1002
100
70
UG1003
200
140
1.0
30
UG1004
400
280
UG1005
600
420
Unit
V
V
A
A
1.0
5.0
100
50
20
95
-65 to +150
1.3
1.7
V
μA
75
10
ns
pF
°C/W
°C
Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
RοHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see
EU Directive Annex Notes 5 and 7.
Short duration pulse test used to minimize self-heating effect.
DS27008 Rev. 4 - 3
1 of 3
www.diodes.com
UG1001 - UG1005
© Diodes Incorporated
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