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1N5819

Description
1 A, 45 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size32KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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1N5819 Overview

1 A, 45 V, SILICON, SIGNAL DIODE

1N5819 Parametric

Parameter NameAttribute value
Number of terminals1
Number of components1
Processing package descriptionDIE-2
stateDISCONTINUED
packaging shapeSQUARE
Package SizeUNCASED chip
surface mountYes
Terminal formNO
terminal coatingtin lead
Terminal locationUPPER
Packaging MaterialsUNSPECIFIED
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage45 V
Maximum average forward current1 A
1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead Free Finish, RoHS Compliant (Note 5)
A
B
A
C
D
Mechanical Data
·
·
·
·
·
·
·
·
Case: DO-41
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
¾
Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Ordering Information: See Page 2
Marking: Type Number and Date Code
Weight: 0.3 grams (approximate)
Dim
A
B
C
D
DO-41 Plastic
Min
25.40
4.06
0.71
2.00
Max
¾
5.21
0.864
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
L
= 90°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
Forward Voltage (Note 2)
Peak Reverse Leakage Current
at Rated DC Blocking Voltage (Note 2)
Typical Total Capacitance (Note 3)
Typical Thermal Resistance Junction to Lead (Note 4)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
T
R
qJL
R
qJA
T
j,
T
STG
1N5817
20
14
1N5818
30
21
1.0
25
1N5819
40
28
Unit
V
V
A
A
@ I
F
= 1.0A
@ I
F
= 3.0A
@ T
A
= 25°C
@ T
A
= 100°C
0.450
0.750
0.550
0.875
1.0
10
110
15
50
-65 to +125
0.60
0.90
V
mA
pF
°C/W
°C
Measured at ambient temperature at a distance of 9.5mm from the case.
Short duration test pulse used to minimize self-heating effect.
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm)
copper pads.
5. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DS23001 Rev. 8 - 2
1 of 3
www.diodes.com
1N5817-1N5819
ã
Diodes Incorporated

1N5819 Related Products

1N5819 1N5817_1 1N5817 1N5818 1N5819-T 1N5819-B
Description 1 A, 45 V, SILICON, SIGNAL DIODE 1 A, 45 V, SILICON, SIGNAL DIODE RECTIFIER DIODE,SCHOTTKY,20V V(RRM),DO-41 1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE
Number of terminals 1 1 - 2 2 -
Number of components 1 1 - 1 1 -
Processing package description DIE-2 DIE-2 - Plastic, DO-41, 2 PIN ROHS COMPLIANT, PALSTIC PACKAGE-2 -
state DISCONTINUED DISCONTINUED CONSULT MFR TRANSFERRED ACTIVE -
packaging shape SQUARE SQUARE - round round -
Package Size UNCASED chip UNCASED chip - LONG FORM LONG FORM -
Terminal form NO NO - Wire Wire -
Terminal location UPPER UPPER - AXIAL AXIAL -
Packaging Materials UNSPECIFIED UNSPECIFIED - Plastic/Epoxy Plastic/Epoxy -
Craftsmanship SCHOTTKY SCHOTTKY - SCHOTTKY SCHOTTKY -
structure single single - single single -
Shell connection isolation isolation - isolation isolation -
Diode component materials silicon silicon - silicon silicon -
Diode type Signal diode Signal diode rectifier diode Signal diode Signal diode -
Maximum repetitive peak reverse voltage 45 V 45 V - 30 V 40 V -
Maximum average forward current 1 A 1 A - 1 A 1 A -

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