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BAS16TW

Description
0.15 A, 75 V, 3 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size327KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BAS16TW Overview

0.15 A, 75 V, 3 ELEMENT, SILICON, SIGNAL DIODE

Lead-free
MMBD4148TW / BAS16TW
SURFACE MOUNT FAST SWITCHING DIODE ARRAY
A
Features
·
·
·
·
·
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Lead Free/RoHS Compliant (Note 3)
G
H
K
M
TOP VIEW
B C
SOT-363
Dim
A
B
C
D
F
H
J
K
L
M
a
Min
0.10
1.15
2.00
0.30
1.80
¾
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
Mechanical Data
·
·
·
·
·
·
·
·
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Please See Ordering Information, Note 5, on
Page 2
Polarity: See Diagram
Marking: KA2 (See Page 2)
Weight: 0.006 grams (approximate)
C
1
0.65 Nominal
J
D
C
2
C
3
F
L
A
1
A
2
A
3
All Dimensions in mm
TOP VIEW
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
@ t = 1.0ms
@ t = 1.0s
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
d
R
qJA
T
j
, T
STG
Value
100
75
53
300
150
2.0
1.0
200
625
-65 to +150
Unit
V
V
V
mA
mA
A
mW
°C/W
°C
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Symbol
V
(BR)R
V
F
Min
75
¾
Max
¾
0.715
0.855
1.0
1.25
1.0
50
30
25
2.0
4.0
Unit
V
V
mA
mA
mA
nA
pF
ns
Test Condition
I
R
= 1mA
I
F
= 1.0mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
j
= 150°C
V
R
= 25V, T
j
= 150°C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
I
R
C
T
t
rr
¾
¾
¾
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS30154 Rev. 9 - 2
1 of 3
www.diodes.com
MMBD4148TW / BAS16TW
ã
Diodes Incorporated

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BAS16TW MMBD4148TW_1
Description 0.15 A, 75 V, 3 ELEMENT, SILICON, SIGNAL DIODE 0.15 A, 75 V, 3 ELEMENT, SILICON, SIGNAL DIODE

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