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DSB5817

Description
1 A, 20 V, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size328KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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DSB5817 Overview

1 A, 20 V, SILICON, SIGNAL DIODE, DO-41

DSB5817 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-41
package instructionHERMETIC SEALED PACKAGE-2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-XALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage20 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
1N5818-1, 1N5819-1, 1N6759-1 – 1N6761-1
and DSB1A20 – DSB1A100
Qualified Levels*:
JAN, JANTX, JANTXV
and JANS
Available on
commercial
versions
1 Amp Schottky Barrier Rectifiers
Qualified per MIL-PRF-19500/586
DESCRIPTION
This 1 Amp Schottky barrier rectifier is metallurgically bonded and offers military grade
qualifications for the part numbers of 1N5819-1 and 1N6761-1 for high-reliability applications.
This small diode is hermetically sealed and bonded into a DO-41 glass package.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 1N5818, 1N5819 and 1N6759 through 1N6761 numbers.
Hermetically sealed DO-41 glass package.
Metallurgically bonded.
*1N5819-1 and 1N6761-1 only are available in JAN, JANTX, JANTXV and JANS qualifications per
MIL-PRF-19500/586.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only).
DO-41 Package
Also available in:
DO-213AB package
(surface mount)
1N5819UR-1,
1N6761UR-1 and CDLL
variants
APPLICATIONS / BENEFITS
Small size for high density mounting using flexible thru-hole leads (see package illustration).
Low reverse (leakage) currents.
Non-sensitive to ESD per MIL-STD-750 test method 1020 (human body model).
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS
@ T
A
= +25 ºC unless otherwise specified
Parameters/Test Conditions
Storage Temperature
Junction Temperature
Symbol
T
STG
T
J
R
ӨJL
R
ӨJA
I
O
I
FSM
Value
-65 to +150
-65 to +125
-65 to +150
70
220
1.0
25
260
Unit
ºC
ºC
ºC/W
ºC/W
A
A
o
C
1N5819-1
1N6761-1
Thermal Resistance, Junction-to-Lead
@ lead length = 0.375 inch (9.52 mm) from body
Thermal Resistance, Junction-to-Ambient
(1)
Average Rectified Output Current
Surge Peak Forward Current
Solder Temperature @ 10 s
NOTE:
1. T
L
= 45ºC for the 1N5819-1 and T
L
= 55ºC for the 1N6761-1.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0301, Rev. 1 (6/25/13)
©2013 Microsemi Corporation
Page 1 of 6

DSB5817 Related Products

DSB5817 1N6761 DSB5818 DSB1A100 DSB1A40E3
Description 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Is it Rohs certified? incompatible incompatible incompatible incompatible conform to
package instruction HERMETIC SEALED PACKAGE-2 S-XUUC-N1 HERMETIC SEALED PACKAGE-2 HERMETIC SEALED PACKAGE-2 ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code unknow compli unknow compli compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED HIGH RELIABILITY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-41 DO-41 DO-41 DO-41 DO-41
JESD-30 code O-XALF-W2 S-XUUC-N1 O-XALF-W2 O-XALF-W2 O-LALF-W2
Number of components 1 1 1 1 1
Number of terminals 2 1 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 150 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED GLASS
Package shape ROUND SQUARE ROUND ROUND ROUND
Package form LONG FORM UNCASED CHIP LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 20 V 100 V 30 V 100 V 40 V
surface mount NO YES NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form WIRE NO LEAD WIRE WIRE WIRE
Terminal location AXIAL UPPER AXIAL AXIAL AXIAL
Is it lead-free? Contains lead Contains lead Contains lead Contains lead -
Maker Microsemi - Microsemi - Microsemi
Parts packaging code DO-41 DO-41 DO-41 DO-41 -
Contacts 2 2 2 2 -
JESD-609 code e0 e0 e0 e0 -
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified -
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
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