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BC847BT

Description
100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size325KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

BC847BT Overview

100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC847BT Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage45 V
Processing package descriptionPLASTIC, ULTRAMINI-3
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingTIN LEAD
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption0.2500 W
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor110
Rated crossover frequency100 MHz
Pb
Lead-free
BC847AT, BT, CT
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
Epitaxial Die Construction
Complementary PNP Type Available (BC857AT,BT,CT)
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
A
C
TOP VIEW
B
G
H
K
M
E
B C
SOT-523
Dim
A
B
C
D
G
H
J
K
L
J
D
L
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
¾
Mechanical Data
·
·
·
·
·
·
·
·
·
·
Case: SOT-523
Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Code: See Table Below & Diagram
on Page 2
Ordering Information: See Page 2
Date Code Information: See Page 2
Weight: 0.002 grams (approximate)
M
N
a
All Dimensions in mm
Type
BC847AT
BC847BT
BC847CT
Marking
1E
1F
1M
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (Note 1)
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
Value
50
45
6.0
100
150
833
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http:/ /www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30274 Rev. 7 - 2
1 of 3
www.diodes.com
BC847AT, BT, CT
ã
Diodes Incorporated

BC847BT Related Products

BC847BT BC847AT_1 BC847CT
Description 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3 3
Transistor polarity NPN NPN NPN
Maximum collector current 0.1000 A 0.1000 A 0.1000 A
Maximum Collector-Emitter Voltage 45 V 45 V 45 V
Processing package description PLASTIC, ULTRAMINI-3 PLASTIC, ULTRAMINI-3 Plastic, ULTRAMINI-3
state ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes
Terminal form FLAT FLAT FLAT
terminal coating TIN LEAD TIN LEAD tin lead
Terminal location DUAL DUAL pair
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY Plastic/Epoxy
structure SINGLE SINGLE single
Number of components 1 1 1
transistor applications SWITCHING SWITCHING switch
Transistor component materials SILICON SILICON silicon
Maximum ambient power consumption 0.2500 W 0.2500 W 0.2500 W
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL Universal small signal
Minimum DC amplification factor 110 110 420
Rated crossover frequency 100 MHz 100 MHz 100 MHz

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