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BC847PN_1

Description
100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size207KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

BC847PN_1 Overview

100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR

BC847PN_1 Parametric

Parameter NameAttribute value
Number of terminals6
Transistor polarityNPN AND PNP
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage45 V
Processing package descriptionGREEN, ULTRA SMALL, PLASTIC PACKAGE-6
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSEPARATE, 2 ELEMENTS
Shell connectionISOLATED
Number of components2
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor200
Rated crossover frequency300 MHz
Pb
Lead-free
BC847PN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE
MOUNT TRANSISTOR
Features
Epitaxial Die Construction
Two Internally Isolated NPN/PNP Transistors in one package
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
C
1
SOT-363
A
B
2
E
2
Dim
A
B C
Min
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
B
C
D
F
H
M
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking (See Page 3): K7P
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
@ T
A
= 25°C unless otherwise specified
J
D
F
K
E
1
B
1
C
2
0.65 Nominal
G
H
J
K
L
M
α
L
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
NPN BC847B Section
Value
50
45
6.0
100
200
200
Unit
V
V
V
mA
mA
mA
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
Characteristic
Symbol
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
@ T
A
= 25°C unless otherwise specified
PNP BC857B Section
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
EM
Value
-50
-45
-5.0
-100
-200
-200
Unit
V
V
V
mA
mA
mA
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation (Note 1) @ T
A
= 25°C Total Device
Thermal Resistance, Junction to Ambient (Note 1) @ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
d
R
θJA
T
j
, T
STG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http:/ /www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30278 Rev. 8 - 2
1 of 4
www.diodes.com
BC847PN
©
Diodes Incorporated
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