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DDTA113TE_1

Description
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size417KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DDTA113TE_1 Overview

100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR

DDTA113TE_1 Parametric

Parameter NameAttribute value
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage50 V
Number of terminals3
Processing package descriptionGREEN, PLASTIC PACKAGE-3
each_compliYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
structureSINGLE WITH BUILT-IN RESISTOR
Minimum DC amplification factor100
jesd_30_codeR-PDSO-G3
jesd_609_codee3
moisture_sensitivity_level1
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
larity_channel_typePNP
wer_dissipation_max__abs_0.1500 W
qualification_statusCOMMERCIAL
sub_categoryBIP General Purpose Small Signal
surface mountYES
terminal coatingMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_40
Transistor component materialsSILICON
Rated crossover frequency250 MHz
dditional_featureBUILT IN BIAS RESISTOR
DDTA
(R1-ONLY SERIES)
E
PNP PRE-BIASED SMALL SIGNAL SOT-523
SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
·
·
·
·
Epitaxial Planar Die Construction
Complementary NPN Types Available (DDTC)
Built-In Biasing Resistor, R1 only
Lead Free/RoHS Compliant (Note 2)
B
A
C
SOT-523
Dim
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
¾
B C
E
TOP VIEW
A
B
C
D
G
H
J
K
L
M
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Terminal Connections: See Diagram
Marking: Date Code and Marking Code (See Diagrams
& Page 2)
Weight: 0.002 grams (approx.)
Ordering Information (See Page 2)
K
G
H
M
N
J
D
L
R
1
B
C
N
a
All Dimensions in mm
E
P/N
DDTA113TE
DDTA123TE
DDTA143TE
DDTA114TE
DDTA124TE
DDTA144TE
DDTA115TE
DDTA125TE
R1 (NOM)
1KW
2.2KW
4.7KW
10KW
22KW
47KW
100KW
200KW
MARKING
P01
P03
P07
P12
P16
P19
P23
P25
SCHEMATIC DIAGRAM
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
@ T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
(Max)
P
d
R
qJA
T
j
, T
STG
Value
-50
-50
-5
-100
150
833
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note:
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30319 Rev. 5 - 2
1 of 4
www.diodes.com
DDTA (R1-ONLY SERIES) E
ã
Diodes Incorporated

DDTA113TE_1 Related Products

DDTA113TE_1 DDTA144TE-7-F DDTA123TE-7-F DDTA113TE-7-F
Description 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Maximum collector current 0.1000 A 0.1000 A 0.1000 A 0.1000 A
Maximum Collector-Emitter Voltage 50 V 50 V 50 V 50 V
Number of terminals 3 3 3 3
Processing package description GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
each_compli Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes
China RoHS regulations Yes Yes Yes Yes
state Active Active Active Active
structure SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC amplification factor 100 100 100 100
jesd_30_code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
jesd_609_code e3 e3 e3 e3
moisture_sensitivity_level 1 1 1 1
Number of components 1 1 1 1
Maximum operating temperature 150 Cel 150 Cel 150 Cel 150 Cel
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
eak_reflow_temperature__cel_ 260 260 260 260
larity_channel_type PNP PNP PNP PNP
wer_dissipation_max__abs_ 0.1500 W 0.1500 W 0.1500 W 0.1500 W
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
sub_category BIP General Purpose Small Signal BIP General Purpose Small Signal BIP General Purpose Small Signal BIP General Purpose Small Signal
surface mount YES YES YES YES
terminal coating MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
ime_peak_reflow_temperature_max__s_ 40 40 40 40
Transistor component materials SILICON SILICON SILICON SILICON
Rated crossover frequency 250 MHz 250 MHz 250 MHz 250 MHz
dditional_feature BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR

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