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DDTA113ZE_1

Description
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size75KB,5 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

DDTA113ZE_1 Overview

100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR

DDTA113ZE_1 Parametric

Parameter NameAttribute value
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage50 V
Number of terminals3
Processing package descriptionGREEN, PLASTIC PACKAGE-3
each_compliYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
structureSINGLE WITH BUILT-IN RESISTOR
Minimum DC amplification factor80
jesd_30_codeR-PDSO-G3
jesd_609_codee3
moisture_sensitivity_level1
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
eak_reflow_temperature__cel_260
larity_channel_typePNP
wer_dissipation_max__abs_0.1500 W
qualification_statusCOMMERCIAL
sub_categoryBIP General Purpose Small Signal
surface mountYES
terminal coatingMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
ime_peak_reflow_temperature_max__s_40
Transistor component materialsSILICON
Rated crossover frequency250 MHz
dditional_featureBUILT-IN BIAS RESISTOR RATIO IS 10
Lead-free
DDTA
(R1¹R2 SERIES)
E
PNP PRE-BIASED SMALL SIGNAL SOT-523
SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
·
·
·
·
·
·
·
·
·
·
·
·
·
Epitaxial Planar Die Construction
Complementary NPN Types Available (DDTC)
Built-In Biasing Resistors, R1¹R2
Lead Free Finish/RoHS Compliant (Note 2)
TOP VIEW
B C
SOT-523
A
Dim
A
B
C
D
Min
0.15
0.75
1.45
¾
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
¾
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
¾
Mechanical Data
Case: SOT-523
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Terminal Connections: See Diagram
Marking: Date Code and Marking Code (See Diagrams &
Page 3)
Weight: 0.002 grams (approx.)
Ordering Information (See Page 2)
K
G
H
M
G
H
N
J
K
L
M
N
a
J
D
L
OUT
3
C
B
R1
R2
All Dimensions in mm
P/N
DDTA113ZE
DDTA123YE
DDTA123JE
DDTA143XE
DDTA143FE
DDTA143ZE
DDTA114YE
DDTA114WE
DDTA124XE
DDTA144VE
DDTA144WE
R1
(NOM)
1KW
2.2KW
2.2KW
4.7KW
4.7KW
4.7KW
10KW
10KW
22KW
47KW
47KW
R2
(NOM)
10KW
10KW
47KW
10KW
22KW
47KW
47KW
4.7KW
47KW
10KW
22KW
MARKING
P02
P05
P06
P09
P10
P11
P14
P15
P18
P21
P22
IN
E
B
1
3
C OUT
1
IN
2
GND(+)
GND (+)
Schematic and Pin Configuration
Equivalent Inverter Circuit
Maximum Ratings
Supply Voltage, (2) to (3)
Input Voltage, (1) to (2)
@ T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDTA113ZE
DDTA123YE
DDTA123JE
DDTA143XE
DDTA143FE
DDTA143ZE
DDTA114YE
DDTA114WE
DDTA124XE
DDTA144VE
DDTA144WE
DDTA113ZE
DDTA123YE
DDTA123JE
DDTA143XE
DDTA143FE
DDTA143ZE
DDTA114YE
DDTA114WE
DDTA124XE
DDTA144VE
DDTA144WE
All
Value
-50
+5 to -10
+5 to -12
+5 to -12
+7 to -20
+6 to -30
+5 to -30
+6 to -40
+10 to -30
+10 to -40
+15 to -40
+10 to -40
-100
-100
-100
-100
-100
-100
-70
-100
-50
-30
-30
-100
150
833
Unit
V
Characteristic
V
IN
2
E
V
Output Current
I
O
mA
Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Note:
I
C
(Max)
P
d
R
qJA
mA
mW
°C/W
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
2
.
No purposefully added lead.
DS30318 Rev. 6 - 2
1 of 5
www.diodes.com
DDTA (R1¹R2 SERIES) E
ã
Diodes Incorporated

DDTA113ZE_1 Related Products

DDTA113ZE_1 DDTA144WE-7-F DDTA123YE-7-F DDTA123JE-7-F
Description 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Maximum collector current 0.1000 A 0.1000 A 0.1000 A 0.1000 A
Maximum Collector-Emitter Voltage 50 V 50 V 50 V 50 V
Number of terminals 3 3 3 3
Processing package description GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
each_compli Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes
China RoHS regulations Yes Yes Yes Yes
state Active Active Active Active
structure SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC amplification factor 80 80 80 80
jesd_30_code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
jesd_609_code e3 e3 e3 e3
moisture_sensitivity_level 1 1 1 1
Number of components 1 1 1 1
Maximum operating temperature 150 Cel 150 Cel 150 Cel 150 Cel
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
eak_reflow_temperature__cel_ 260 260 260 260
larity_channel_type PNP PNP PNP PNP
wer_dissipation_max__abs_ 0.1500 W 0.1500 W 0.1500 W 0.1500 W
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
sub_category BIP General Purpose Small Signal BIP General Purpose Small Signal BIP General Purpose Small Signal BIP General Purpose Small Signal
surface mount YES YES YES YES
terminal coating MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
ime_peak_reflow_temperature_max__s_ 40 40 40 40
Transistor component materials SILICON SILICON SILICON SILICON
Rated crossover frequency 250 MHz 250 MHz 250 MHz 250 MHz
dditional_feature BUILT-IN BIAS RESISTOR RATIO IS 10 BUILT-IN BIAS RESISTOR RATIO IS 10 BUILT-IN BIAS RESISTOR RATIO IS 10 BUILT-IN BIAS RESISTOR RATIO IS 10
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