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DLPT05_1

Description
300 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size106KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

DLPT05_1 Overview

300 W, UNIDIRECTIONAL, SILICON, TVS DIODE

DLPT05_1 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Minimum breakdown voltage6 V
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipAVALANCHE
structuresingle
Diode component materialssilicon
polarityunidirectional
Diode typeTRANS voltage SUPPRESSOR diode
shutdown voltage5 V
Maximum non-repetitive peak speed power300 W
Lead-free
DLPT05
SURFACE MOUNT DATALINE PROTECTION
DEVICE
Features
NEW PRODUCT
·
·
·
·
·
300 Watts Peak Pulse Power (tp = 8x20ms)
Transient Protection for data line to IEC61000-4-2 level 4
(ESD), 8kV HBM, and IEC 61000-4-4 (EFT)
Low Leakage Current
Surface Mount Package Ideally Suited for Automatic
Insertion
Lead Free/RoHS Compliant (Note 4)
B
TOP VIEW
E
E
D
G
H
K
C
B
C
A
SOT-23
Dim
A
B
C
D
E
G
H
M
L
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Terminal Connections: See Diagram
Part Marking (See Page 3): A01
Ordering & Date Code Information: Page 3
Weight: 0.008 grams (approximate)
J
K
L
M
a
J
GROUND
TVS
All Dimensions in mm
LINE TO
BE PROTECTED
V
CC
Maximum Ratings, Total Device
Characteristic
Peak Pulse Power (tp = 8x20ms)
Peak Forward Voltage (I
PP
= 1A, tp = 8x20ms)
Diode Peak Repetitive Reverse Voltage
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
@ T
A
= 25°C unless otherwise specified
Symbol
P
PK
V
FP
V
RRM
R
qJA
T
j
, T
STG
Value
300
2.1
75
417
-55 to +150
Unit
W
V
V
°C/W
°C
Electrical Characteristics, TVS Element
Reverse
Standoff
Voltage
V
RWM
(V)
5
Notes:
@ T
A
= 25°C unless otherwise specified
Max. Clamping
Voltage @ I
pp
= 1A
(Note 3)
V
C
(V)
9.8
Max. Peak Pulse
Current (Note 2)
(A)
17
Typical Total
Capacitance
(Note 1)
(pF)
1.9
Breakdown Voltage
V
BR
@ I
T
Min (V)
6
Max (V)
¾
Test
Current
I
T
(mA)
1.0
Max. Reverse
Leakage @ V
RWM
I
R
(mA)
20
1. V
R
= 0V, f = 1MH
Z
from line to be protected to ground pin.
2. tp = 8x20ms.
3. Clamping voltage values are based on an 8x20ms peak pulse current (I
pp
) waveform.
4. No purposefully added lead.
DS30310 Rev. 6 - 2
1 of 4
www.diodes.com
DLPT05
ã
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