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DMMT3904W_1

Description
200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size77KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

DMMT3904W_1 Overview

200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

DMMT3904W_1 Parametric

Parameter NameAttribute value
Number of terminals6
Transistor polarityNPN
Maximum on-time70 ns
Maximum off time250 ns
Maximum collector current0.2000 A
Maximum Collector-Emitter Voltage40 V
Processing package descriptionGREEN, PLASTIC PACKAGE-6
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSEPARATE, 2 ELEMENTS
Number of components2
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor30
Rated crossover frequency300 MHz
DMMT3904W
MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Intrinsically Matched NPN Pair (Note 1)
Small Surface Mount Package
2% Matched Tolerance, h
FE
, V
CE(SAT)
, V
BE(SAT)
Lead Free/RoHS Compliant (Note 3)
SOT-363
A
C
2
E
2
E
1
Dim
A
B C
Min
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
B
C
D
F
H
M
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering & Date Code Information: See Page 4
Weight: 0.015 grams (approximate)
B
2
B
1
C
1
0.65 Nominal
H
K
J
K
L
M
α
J
D
F
L
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation (Note 2)
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θJA
T
j
, T
STG
Value
60
40
6.0
200
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Notes:
1.
2.
3.
Built with adjacent die from a single wafer.
Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead.
DS30311 Rev. 9 - 2
1 of 4
www.diodes.com
DMMT3904W
© Diodes Incorporated
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