1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead
DS30268 Rev. 8 - 2
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MMBT2222AT
ã
Diodes Incorporated
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 3)
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
Min
75
40
6.0
¾
¾
35
50
75
100
40
¾
0.6
¾
¾
—
300
0.25
¾
75
25
¾
Max
¾
¾
¾
10
20
¾
¾
¾
¾
¾
0.3
1.0
1.2
2.0
8
30
¾
1.25
4.0
375
200
4.0
Unit
V
V
V
nA
nA
Test Condition
I
C
= 10mA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10mA, I
C
= 0
V
CE
= 60V, V
EB(OFF)
= 3.0V
V
CE
= 60V, V
EB(OFF)
= 3.0V
I
C
= 100mA, V
CE
=
I
C
= 1.0mA, V
CE
=
I
C
= 10mA, V
CE
=
I
C
= 150mA, V
CE
=
I
C
= 500mA, V
CE
=
10V
10V
10V
10V
10V
DC Current Gain
h
FE
¾
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
V
CE(SAT)
V
BE(SAT)
V
V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0kHz
V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0kHz
V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0kHz
V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0kHz
V
CE
= 10 Vdc, I
C
= 100
mAdc,
R
S
= 1.0 k ohms, f = 1.0kHz
C
obo
C
ibo
f
T
h
ie
h
re
h
fe
h
oe
NF
pF
pF
MHz
kW
X 10
-4
¾
mS
dB
t
d
t
r
t
s
t
f
¾
¾
¾
¾
10
25
225
60
ns
ns
ns
ns
V
CC
= 30V, I
C
= 150mA,
V
BE(off)
= - 0.5V, I
B1
= 15mA
V
CC
= 30V, I
C
= 150mA,
I
B1
= I
B2
= 15mA
3. Short duration pulse test used to minimize self-heating effect.
250
(see Note 1)
1000
P
d
, POWER DISSIPATION (mW)
h
FE
, DC CURRENT GAIN
200
T
A
= 125°C
150
100
T
A
= -25°C
T
A
= +25°C
100
10
50
V
CE
= 1.0V
0
0
40
80
120
160
200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
1
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs
Collector Current
DS30268 Rev. 8 - 2
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MMBT2222AT
35
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
2.0
f = 1MHz
30
25
CAPACITANCE (pF)
20
15
10
5
0
Cibo
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
I
C
= 30mA
I
C
= 1mA
I
C
= 10mA
I
C
= 100mA
I
C
= 300mA
Cobo
0
2
4
6
8
10
12
14
16
18
20
0.01
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance Characteristics
I
B
, BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
0.5
1.0
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
I
C
I
B
= 10
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
CE
= 5V
T
A
= -50°C
T
A
= 25°C
0.4
T
A
= 25°C
0.3
T
A
= 150°C
0.2
T
A
= 150°C
0.1
T
A
= -50°C
0
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
1000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
1
DS30268 Rev. 8 - 2
3 of 4
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MMBT2222AT
Ordering Information
Device
(Note 4)
Packaging
SOT-523
Shipping
3000/Tape & Reel
MMBT2222AT-7-F
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
1PYM
1P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
1998
J
Month
Code
1999
K
2000
L
Jan
1
2001
M
Feb
2
2002
N
March
3
2003
P
Apr
4
2004
R
May
5
2005
S
Jun
6
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
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