Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 2)
A
P
3
E
G
POWERMITEâ3
Dim
A
B
Min
4.03
6.40
Max
4.09
6.61
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: POWERMITEâ3
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish).
e
3
Polarity: See Diagram
Marking: Type Number, See also Sheet 3
Ordering Information, See Sheet 3
Weight: 0.072 grams (approximate)
Note:
1
2
B
J
H
C
D
E
G
H
.889 NOM
1.83 NOM
1.10
5.01
4.37
.71
.36
1.73
1.14
5.17
4.43
.77
.46
1.83
.178 NOM
M
D
C
PIN 1
PIN 2
PIN 3, BOTTOMSIDE
HEAT SINK
K
C
L
J
K
L
M
P
.178 NOM
Pins 1 & 2 must be electrically
connected at the printed circuit board.
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (see also Figure 5)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
@ T
C
= 90°C
Typical Thermal Resistance Junction to Soldering Point
Operating Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
R
qJS
T
j
T
STG
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
FM
Min
40
¾
¾
¾
¾
¾
¾
¾
Typ
¾
0.48
0.45
0.59
0.56
0.05
2.5
250
Max
¾
0.52
¾
¾
¾
0.5
20
¾
Unit
V
V
Test Condition
I
R
= 0.5mA
I
F
= 5A, T
S
= 25°C
I
F
= 5A, T
S
= 125°C
I
F
= 10A, T
S
= 25°C
I
F
= 10A, T
S
= 125°C
T
S
= 25°C, V
R
= 40V
T
S
= 100°C, V
R
= 40V
f = 1.0MHz, V
R
= 4.0V DC
Value
40
28
5
100
3.2
-55 to +125
-55 to +150
Unit
V
V
A
A
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage
Reverse Current (Note 1)
Total Capacitance
Notes:
I
RM
C
T
mA
pF
1. Short duration test pulse used to minimize self-heating effect.
2. RoHS revision 13.2.2003. High Temperature Solder Exemption Applied, see
EU Directive Annex Note 7.
DS30297 Rev. 6 - 2
1 of 3
www.diodes.com
SBM540
ã
Diodes Incorporated
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
100
10
T
J
= 125°C
10
T
J
= 100°C
1.0
T
J
= 100°C
1.0
T
J
= 25°C
T
J
= 75°C
0.1
0.1
0.01
T
J
= 25°C
0.01
0
0.2
0.4
0.6
0.8
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
0.001
0
5
10
15
20
25
30
35
40
V
R
,
INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
125
Single Half-Sine-Wave
1000
C
T
, TOTAL CAPACITANCE (pF)
T
C
= 90°C
100
T
j
= 25°C
f = 1MHz
75
100
50
25
0
1
10
100
10
0.1
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Forward Surge Current
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
vs. Reverse Voltage
DS30297 Rev. 6 - 2
2 of 3
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SBM540
7.5
P
F(AV)
, AVERAGE FORWARD POWER DISSIPATION (W)
4
4
3.5
3
2.5
2
1.5
1
0.5
0
0
5
8
7
9 10
3
4
6
2
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Fig. 6 Forward Power Dissipation
1
5
dc
I
F
, DC FORWARD CURRENT (A)
6.0
Note 3
4.5
Note 4
3.0
1.5
Note 5
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 DC Forward Current Derating
Notes:
3. T
A
= T
SOLDERING POINT
, R
qJS
= 3.2°C/W, R
qSA
= 0°C/W.
4. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. R
qJA
in range of 15-30°C/W.
5. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R
qJA
in range of
60-75°C/W.
Ordering Information
Device
SBM540-13-F
Notes:
(Note 6)
Packaging
POWERMITEâ3
Shipping
5000/Tape & Reel
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
SBM540
YYWW(K)
SBM540 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 02 for 2002
WW = Week code 01 to 52
(K) = Factory Designator
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
POWERMITE
is a registered trademark of Microsemi Corporation.
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