DDTD
(LO-R1)
U
NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Types Available (DDTB)
Built-In Biasing Resistors
Lead Free/RoHS Compliant (Note 2)
"Green" Device, Note 3 and 4
A
SOT-323
Dim
B C
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
0°
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
A
B
C
D
E
G
H
J
K
Mechanical Data
•
•
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Marking Information: See Table Below & Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
G
H
K
M
0.65 Nominal
•
•
•
•
•
•
•
J
D
E
L
L
M
α
OUT
3
All Dimensions in mm
P/N
DDTD122LU
DDTD142JU
DDTD122TU
DDTD142TU
R1 (NOM)
0.22KΩ
0.47KΩ
0.22KΩ
0.47KΩ
R2 (NOM)
10KΩ
10KΩ
OPEN
OPEN
MARKING
N75
N76
N77
N78
1
C
B
R1
R2
E
2
GND(0)
IN
Schematic and Pin Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CC
DDTD122LU
DDTD142JU
DDTD122TU
DDTD142TU
All
(Note 1)
(Note 1)
V
IN
V
EBO (MAX)
I
C
P
d
R
θ
JA
T
j
, T
STG
Value
50
-5 to +6
-5 to +6
5
500
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Supply Voltage, (3) to (2)
Input Voltage, (1) to (2)
Input Voltage, (2) to (1)
Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30398 Rev. 6 - 2
1 of 3
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DDTD (LO-R1) U
© Diodes Incorporated
Electrical Characteristics
Characteristic
Input Voltage
@T
A
= 25°C unless otherwise specified
Symbol
DDTD122LU
DDTD142JU
DDTD122LU
DDTD142JU
DDTD122LU
DDTD142JU
DDTD122LU
DDTD142JU
V
l(off)
V
l(on)
V
O(on)
I
l
I
O(off)
G
l
f
T
Min
0.3
0.3
⎯
⎯
⎯
⎯
56
56
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
200
Max
⎯
2.0
2.0
0.3V
28
13
0.5
⎯
⎯
R1, R2 Types
Unit
V
V
V
mA
μA
⎯
Test Condition
V
CC
= 5V, I
O
= 100μA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
I
O
/I
l
= 50mA/2.5mA
V
I
= 5V
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 50mA
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product*
* Transistor - For Reference Only
MHz V
CE
= 10V, I
E
= 5mA, f = 100MHz
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
@T
A
= 25°C unless otherwise specified
Symbol
BV
CBO
BV
CEO
DDTD122TU
DDTD142TU
BV
EBO
I
CBO
DDTD122TU
DDTD142TU
I
EBO
V
CE(sat)
DDTD122TU
DDTD142TU
h
FE
f
T
Min
50
40
5
⎯
⎯
⎯
⎯
100
100
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
250
250
200
R1-Only, R2-Only Types
Max
⎯
⎯
⎯
0.5
0.5
0.5
0.3
600
600
⎯
Unit
V
V
V
μA
μA
V
⎯
I
C
= 50μA
I
C
= 1mA
I
E
= 50μA
I
E
= 50μA
V
CB
= 50V
V
EB
= 4V
I
C
= 50mA, I
B
= 2.5mA
I
C
= 5mA, V
CE
= 5V
Test Condition
MHz V
CE
= 10V, I
E
= -5mA, f = 100MHz
DS30398 Rev. 6 - 2
2 of 3
www.diodes.com
DDTD (LO-R1) U
© Diodes Incorporated
250
P
d
, POWER DISSIPATION (mW)
200
150
100
50
0
-50
0
50
100
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Derating Curve
150
Ordering Information
(Note 4 & 5)
Device
DDTD122LU-7-F
DDTD142JU-7-F
DDTD122TU-7-F
DDTD142TU-7-F
Notes:
Packaging
SOT-323
SOT-323
SOT-323
SOT-323
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NXX = Product Type Marking Code
See Page 1 Table
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
NXX
Date Code Key
Year
Code
Month
Code
2002
N
Jan
1
2003
P
Feb
2
2004
R
Mar
3
2005
S
Apr
4
YM
2006
T
May
5
Jun
6
2007
U
Jul
7
2008
V
Aug
8
2009
W
Sep
9
2010
X
Oct
O
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30398 Rev. 6 - 2
3 of 3
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DDTD (LO-R1) U
© Diodes Incorporated