DZT853
NPN SURFACE MOUNT TRANSISTOR
NEW PRODUCT
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available (DZT953)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT-223
COLLECTOR
Mechanical Data
•
•
•
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
BASE
TOP VIEW
Schematic and Pin Configuration
•
•
EMITTER
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
, T
STG
Value
200
100
6
6
1 (Note 3)
3 (Note 4)
-55 to +150
Unit
V
V
V
A
W
°C
Characteristic
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, pad layout as shown on page 4.
The power which can be dissipated, assuming the device is mounted in a typical manner on a PCB with copper equal to 4 square inch minimum.
DS30737 Rev. 3 - 2
1 of 4
www.diodes.com
DZT853
© Diodes Incorporated
Electrical Characteristics
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
@T
A
= 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
200
100
6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
100
50
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
V
V
I
C
= 100μA, I
E
= 0
I
C
= 10mA*, I
B
= 0
B
I
E
= 100μA, I
C
= 0
V
CB
= 150V, I
E
= 0
V
CB
= 150V, I
E
= 0, T
A
= 100°C
V
EB
= 6V, I
C
= 0
10
1
10
nA
μA
nA
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
h
FE
50
150
340
1250
1100
⎯
300
⎯
⎯
mV
mV
mV
⎯
I
C
= 0.1A, I
B
= 5mA*
I
C
= 2A, I
B
= 100mA*
I
C
= 5A, I
B
= 500mA*
B
B
B
I
C
= 5A, I
B
= 500mA*
B
I
CE
= 5A, V
CE
= 2V*
I
C
= 10mA, V
CE
= 2V*
I
C
= 2A, V
CE
= 2V*
I
C
= 4A, V
CE
= 2V*
I
C
= 10A, V
CE
= 2V*
I
C
= 100mA, V
CE
= 10V,
f = 50MHz
V
CB
= 10V, f = 1MHz
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Switching Times
*
t
on
t
off
⎯
50
1650
⎯
ns
ns
I
C
= 1A, V
CC
= 10V
I
B1
= I
B2
= 100mA
f
T
C
obo
⎯
⎯
130
35
⎯
⎯
MHz
pF
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%
@T
amb
= 25°C unless otherwise specified
Typical Characteristics
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
Fig. 2 Collector Current vs. Collector Emitter-Voltage
Notes:
3.
Device mounted on FR-4 PCB, pad layout as shown on page 4.
DS30737 Rev. 3 - 2
2 of 4
www.diodes.com
DZT853
© Diodes Incorporated
NEW PRODUCT
Fig. 3 Typical DC Current Gain vs. Collector Current
Fig. 4 Collector-Emitter Saturation Voltage vs. Collector Current
Fig. 5 Base-Emitter Turn-On Voltage vs. Collector Current
Fig. 6 Base-Emitter Saturation Voltage vs. Collector Current
Ordering Information
(Note 5)
Device
DZT853-13
Notes:
Packaging
SOT-223
Shipping
2500/Tape & Reel
5. Packaging Details as shown on page 4, or go to our website at http://www.diodes.com/ap2007.pdf.
Marking Information
DZT853 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
DS30737 Rev. 3 - 2
2006
T
Jan
1
Feb
2
2007
U
Mar
3
Apr
4
2008
V
May
5
3 of 4
Jun
6
2009
W
Jul
7
2010
X
Aug
8
Sep
9
2011
Y
Oct
O
Nov
N
2012
Z
Dec
D
DZT853
© Diodes Incorporated
www.diodes.com
Package Outline Dimensions
NEW PRODUCT
SOT-223
Dim
A
A1
b1
b2
C
D
E
E1
e
e1
L
Q
Min
1.55
0.010
2.90
0.60
0.20
6.45
3.45
6.90
—
—
0.85
0.84
Max
1.65
0.15
3.10
0.80
0.30
6.55
3.55
7.10
—
—
1.05
0.94
Typ
1.60
0.05
3.00
0.70
0.25
6.50
3.50
7.00
4.60
2.30
0.95
0.89
All Dimensions in mm
Suggested Pad Layout: (Based on IPC-SM-782)
(Unit:mm)
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30737 Rev. 3 - 2
4 of 4
www.diodes.com
DZT853
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
