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1N5711WS_1

Description
0.015 A, 70 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size71KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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1N5711WS_1 Overview

0.015 A, 70 V, SILICON, SIGNAL DIODE

1N5711WS_1 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGREEN, PLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit0.1500 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time1.00E-3 us
Maximum repetitive peak reverse voltage70 V
Maximum average forward current0.0150 A
1N5711WS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
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Features
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
Fast Switching Speed
Low Capacitance
Surface Mount Package Ideally Suited for Automated Insertion
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Mechanical Data
Case: SOD-323
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: Cathode Band
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.004 grams (approximate)
Top View
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
Value
70
49
15
Unit
V
V
mA
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
T
STG
Value
150
650
-55 to +125
-55 to +150
Unit
mW
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Reverse Leakage Current (Note 2)
Forward Voltage Drop
Total Capacitance
Reverse Recovery Time
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
I
R
V
F
C
T
t
rr
Min
70
Typ
Max
200
0.41
1.00
2.0
1.0
Unit
V
nA
V
pF
ns
Test Conditions
I
R
= 10μA
V
R
= 50V
I
F
= 1.0mA
I
F
= 15mA
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 5.0mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead. Halogen and Antimony Free.
Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
1N5711WS
Document number: DS31033 Rev. 12 - 2
1 of 3
www.diodes.com
July 2008
© Diodes Incorporated

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1N5711WS_1 1N5711WS
Description 0.015 A, 70 V, SILICON, SIGNAL DIODE 0.015 A, 70 V, SILICON, SIGNAL DIODE

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