Surface Mount Switching Diode
COMCHIP
www.comchip.com.tw
BAV99W Thru BAW56W
Features
Fast Switching Speed
Surface Mount Package Ideally Suited
for Automatic Insertio
For General Purpose Switching Applications
High Conductance
Voltage: 70 Volts
Current: 215mA
SOT-323
.087 (2.2)
.070 (1.8)
.016 (.40)
Mechanical data
Case: SOT -
323,
Plastic
Approx. Weight: 0.008 gram
This diodes is also available in other
configurations including a dual common
cathode with type designation BAV70W,a
dual
common anodes with type designation
BAW56 and single chip inside with type
Designation BAL99W
Top View
.054 (1.35)
.045 (1.15)
3
1
2
.004 (0.1) max.
CATHODE
1
3
3
ANODE
2
CATHODE
ANODE
ANODE
2
CATHODE
CATHODE
ANODE
CATHODE
1
ANODE
1
2
CATHODE
.016 (.40)
.016 (.40) max.
3
CATHODE
3
.087 (2.2)
.078(2. 0)
2
ANODE
Dimensions in inches (millimeters)
BAV70W
Maximum Ratings
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
BAW56W
Symbol
V
R
I
F
I
FM
(surge)
Value
70
215
500
Units
V
DC
mAdc
mAdc
Thermal Characteristics
Characteristic
Total Device Dissipation FR– 5 Board(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
R
JA
Max
225
1.8
556
300
2.4
417
–55 to +150
Units
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
P
D
R
JA
T
J
, T
stg
Electrical Characterics (TA = 25°C unless otherwise noted)
Characteristic (OFF CHARACTERISTICS)
Reverse Breakdown Voltage ( I
(BR)
= 100 uAdc )
Reverse Voltage Leakage Current
V
R
= 25 Vdc, T
J
= 150°C
V
R
= 70 Vdc
V
R
= 70 Vdc, T
J
= 150°C
Diode Capacitance (V
R
= 0, f = 1.0 MHz))
Forward Voltage
I
F
= 1.0 mAdc
I
F
= 10 mAdc
I
F
= 50 mAdc
I
F
= 150 mAdc
Reverse Recovery Time (I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0mAdc) R
L
= 100
1.FR–5 = 1.0 X 0.75X 0.062 in.
MDS0302003A
Symbol
V
(BR)
I
R
C
D
Min
70
-
-
-
-
Max
-
30
2.5
50
1.5
715
855
1000
1250
6.0
.044 (1.10)
.035 (0.90)
1
.006 (0.15)
.002 (0.05)
BAV99W
ANODE
BAL99W
.056(1.4) .047(1.2)
Units
Vdc
uAdc
pF
VF
-
-
-
mV
Trr
nS
2.Aluminum = 0.4X 0.3X 0.024 in. 99.5%
aluminum.
Page 1
Surface Mount Switching Diode
COMCHIP
www.comchip.com.tw
RATING AND CHARACTERISTIC CURVES (BAV99W Thru BAW56W)
820
Ω
+10 V
2.0 k
100
µH
0.1
µF
DUT
50
Ω
Output
Pulse
Generator
50
Ω
Input
Sampling
Oscilloscopes
VR
0.1
µF
tr
tp
10%
t
IF
trr
t
IF
90%
IR
Input Signal
I
R(REC) = 1.0 mA
Output Pulse
(IF = IR = 10 mA;
Measured
at I
R(REC) = 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes:
3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
TA = 150°C
IF, Forward
Current (mA)
(mA)
TA = 85°C
10
IR , Reverse
Current
(µA)
1.0
T
A = 125°C
TA = – 40°C
0.1
TA = 85°C
1.0
TA = 25°C
TA = 55°C
0.01
TA = 25°C
0.1
0.2
0.4
0.6
0.8
VF, Forward
Voltage (V)
1.0
1.2
0.001
0
10
20
30
VR, Reverse
Voltage (V)
40
50
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
CD, Diode
Capacitance
(pF)
0.64
0.60
0.56
0.52
0
2
4
VR, Reverse
Voltage (V)
6
8
Figure 4. Capacitance
MDS0302003A
Page 2
stm32/stm8
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